Doping of nanocrystalline silicon with sulfur by gas-phase diffusion

Popelensky, Vadim M.; Chernysheva, G.S.; Kononov, N. N.; Bubenov, Sergei S.; Vinokurov, A. A.; Dorofeev, S. G.

doi:10.1016/j.inoche.2022.109602

Cited by 3 publications

(7 citation statements)

References 38 publications

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“…In Table 2, the results of the annealings with all three chalcogens are presented. As it was stated above, annealing with sulfur led to the formation of hexahedral rods that, supposedly, had hexagonal lattices [30]. Annealing with selenium did not result in the formation of rods, but faceted crystallites 0.2-1 µm in size were observed (Figure 2), resembling truncated octahedrons in shape.…”

Section: Annealing Of Nanosilicon With Selenium and Telluriummentioning

confidence: 65%

“…Previously, we obtained silicon microrods in the presence of sulfur vapor. The properties of these rods indicated the formation of noncubic silicon [30]. A feature of this work is the absence of a metal catalyst.…”

Section: Introductionmentioning

confidence: 84%

“…The conductivity of samples was measured with a potentiostat P8-nano (Elins). The electrical properties of etched nc-Si sols were investigated on microhotplates that are normally used for gas sensors, as discussed elsewhere [30]. Before electrical measurements, the films were annealed in UHV at 900 • C for 6 min in the case of Si:S and Si:Te, and at 700 • C for 42 s in the case of Si:Se.…”

Section: Methodsmentioning

confidence: 99%

“…To determine the optimal conditions for obtaining silicon microrods, a series of annealings in the presence of sulfur (20 at.%) at varied times and at temperatures in the range of 800-850 • C was carried out. Synthetic conditions and results from our previous work [30] are also included in Table 1 for comparison (see samples Si:S500, Si:S700 and Si:S900). * Symbols "+", "++" and "+++" are used to show the relative amount of rods in corresponding samples, with "+" meaning the lowest and "+++" the highest amount; "-" means that no rods are present in the sample.…”

Section: Annealing Of Nanosilicon With Sulfurmentioning

confidence: 99%

“…Therefore, the NiSi 2 crystallite migrates through the amorphous silicon phase due to the diffusion of Ni atoms, which results in the crystallization of silicon along the <111> direction [31]. In the case of sulfur, the formation of microrods [30] can be a result of the crystallization of the amorphous part of the nc-Si sample during the formation of the orthorhombic SiS 2 phase (PDF 3-144; a = 5.60 Å; b = 5.53 Å; c = 9.55 Å; T melt ~1100 • C) [32], parameters a and b of which are close to that of cubic silicon (a = 5.47 Å). The SiS 2 phase may work here as a crystallization inductor, similarly to NiSi 2 .…”

Section: Introductionmentioning

confidence: 99%

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Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

et al. 2022

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Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of μm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

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Section: Annealing Of Nanosilicon With Selenium and Telluriummentioning

confidence: 65%

Section: Introductionmentioning

confidence: 84%

Section: Methodsmentioning

confidence: 99%

Section: Annealing Of Nanosilicon With Sulfurmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

et al. 2022

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Doped Silicon Nanoparticles. A Review

Bubenov,

Dorofeev

2024

Dokl Chem

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Doped silicon nanoparticles. A review

Bubenov,

Dorofeev

2024

Doklady Rossijskoj akademii nauk. Himiâ, nauki o materialah.

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Doped silicon nanoparticles combine availability and biocompatibility of the material with a wide variety of functional properties. In this review, the methods of fabrication of doped silicon nanoparticles are discussed, the prevalent of those being chemical vapor deposition, annealing of substoichiometric silicon compounds, and diffusion doping. The data are summarized for the attained impurity contents, in the important case of phosphorus it is shown that impurity, excessive with respect to bulk solubility, is electrically inactive. The patterns of intraparticle impurity distributions are presented, that were studied in the previous decade with highly-informative techniques of atom probe tomography and solid-state NMR. Prospective optical and electrical properties of doped silicon nanoparticles are reviewed, significant role of the position of the impurities is exemplified with plasmonic behavior.

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Doping of nanocrystalline silicon with sulfur by gas-phase diffusion

Cited by 3 publications

References 38 publications

Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

Doped Silicon Nanoparticles. A Review

Doped silicon nanoparticles. A review

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