Doping of Materials During Manufacture <I>p</I>–<I>n</I>-Junctions and Bipolar Transistors. Analytical Approaches to Model Technological Approaches and Ways of Optimization of Distributions of Dopants

On Modification of Properties of P-N-Junctions During Overgrowth

“…We calculate distribution of concentration of dopant in space in time by method of averaging of function corrections [25][26][27][28][29][30]. To use the method we re-write Eqs.…”

“…To use the method we re-write Eqs. (1), (3) and (5) We determined average values of the first-order approximations of the considered concentrations by using the following standard relations [25][26][27][28][29][30] ( )…”

“…We used standard iterative procedure of method of averaging of function corrections to calculate the second-and higher-order approximations of the considered concentrations [25][26][27][28][29][30]. Framework the procedure to calculate approximations of the n-th order of the above concentrations we replace the functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), Φ I (x,y,z,t) and Φ V (x,y,z,t) in the Eqs.…”

“…Framework the procedure to calculate approximations of the n-th order of the above concentrations we replace the functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), Φ I (x,y,z,t) and Φ V (x,y,z,t) in the Eqs. (1), (3), (5) We calculate average values of the second-order approximations of required functions by using the following standard relation [25][26][27][28][29][30] …”

“…(8) on the standard sums α 1i +u i (x,y,z,t) [19,26]. Equations for components of the displacement vector are presented in the Appendix.…”