Doping of III-nitride materials

Pampili, Pietro; Parbrook, P. J.

doi:10.1016/j.mssp.2016.11.006

Cited by 93 publications

(63 citation statements)

References 157 publications

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“…To explore relative stability of different doping models, the formation energies which can usually describe the difficulty of forming doped structure are calculated and discussed. And formation energy formulas for doping model under N‐rich condition and Ga‐rich condition are described as 33‐35 :

E_{form}^{N} = E_{doped} - E_{pure} + n μ_{Ga} - n μ_{X} + {qE}_{f}

E_{form}^{Ga} = E_{doped} - E_{pure} + n μ_{N} - n μ_{X} + {qE}_{f}

…”

Section: Resultsmentioning

confidence: 96%

Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

Liu

2020

Int J Energy Res

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By using first principles, the p-doping mechanism of two-dimensional GaN with buckled structure is discussed in detail under various doping configurations, including different doping elements, positions, and concentrations. The research implies that difference in electronegativity between three doping elements: Be, Zn, Mg and two-dimensional GaN results in a significant change in atomic structure and charge distribution. When Be, Zn, and Mg atoms are doped at Ga position, doping process in two-dimensional GaN is easier because their formation energies are 1.684, 4.630, and 3.390 eV, respectively, which are lower than doped at N position. In addition, Ga doping site is more favorable for p-type doping because bandgap and work function of two-dimensional GaN are reduced and it would convert into p-type semiconductor when a Ga atom is replaced by dopants. K E Y W O R D Sfirst principles, formation energy, optoelectronic properties, p-type doping, twodimensional GaN

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E_{form}^{N} = E_{doped} - E_{pure} + n μ_{Ga} - n μ_{X} + {qE}_{f}

E_{form}^{Ga} = E_{doped} - E_{pure} + n μ_{N} - n μ_{X} + {qE}_{f}

…”

Section: Resultsmentioning

confidence: 96%

Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

Liu

2020

Int J Energy Res

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“…composition Al x Ga 1-x N. 19,20 This is different from MBE-grown Al x Ga 1-x N films where dopant incorporation was found to be independent of the Al-composition of the film. 16,17 Thus, while MBE can achieve degenerately doped Al-composition graded contact layer using the same growth condition, a continuous shift in optimum dopant incorporation condition makes growing such uniformly high doped Al-composition graded Al x Ga 1-x N films challenging for MOCVD.…”

Section: Usamentioning

confidence: 82%

Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Hwang

Coleman

Han

et al. 2019

Applied Physics Letters

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In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (UWBG) Al 0.70 Ga 0.30 N channel metalsemiconductor field-effect transistors (MESFETs). Increasing the thickness of the reverse graded layer was found to improve contact layer resistance significantly, leading to contact resistance of 3.3×10 -5 Ω·cm 2 . Devices with gate length, L G , of 0.6 µm and source-drain spacing, L SD , of 1.5 µm displayed a maximum current density, I DS,MAX , of 635 mA/mm with an applied gate voltage, V GS , of +2 V. Breakdown measurements on transistors with gate to drain spacing, L GD , of 770 nm had breakdown voltage greater than 220 , corresponding to minimum breakdown field of 2.86 MV/cm. This work provides a framework for the design of low resistance contacts to MOCVD grown high Al-content Al x Ga 1-x N channel transistors.

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“…The transition between the exhaustion regime and the intrinsic regime mark the temperature limit for a semiconductor device, called intrinsic temperature. Hence the importance, in the case of applications in high temperature, to push to the maximum this transition if one defines the intrinsic temperature as the temperature where the intrinsic concentration ( ) becomes comparable or equal to the concentration of the impurities net doping 9 ( ) = | − | (5)…”

Section: Intrinsic Temperaturementioning

confidence: 99%

Organic Semiconductivity and Photovoltaism: Concepts and applications

et al. 2019

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This work has for the objective, the theoretical explanation of the semi-conduction mechanisms as well as the photovoltaism in molecular organic materials by the creation of excitons and the transfer of Ï€ electrons of a donor (P3HT) to an acceptor (PCBM). In focusing on the broad technological applications of the molecular optoelectronic phenomena, this will provide the capital importance of the molecular electronic as a scientific and technical revolution which extends from the energy, has medicine up to the areas confusing nanotechnology and quantum electronics.

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Doping of III-nitride materials

Cited by 93 publications

References 157 publications

Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Organic Semiconductivity and Photovoltaism: Concepts and applications

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