“…An annealing study of neutron irradiated 4H-SiC using ESR and optical absorption showed that the optical transition at 780 nm (1.59 eV), which is comparable to the RD 4 energy level, is originating from V Si [83]. The RD 5 levels at around E C -0.5 eV in 6H-SiC (same as L 6 , E i ) [54,57,58,63,66] are reported to show the similar annealing behavior to V C below 500…”