Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

Koide, Norikatsu; Kato, H.; Sassa, M.; Yamasaki, S.; Manabe, K.; Hashimoto, M.; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu

doi:10.1016/0022-0248(91)90818-p

Cited by 126 publications

(41 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Secondary ion mass spectroscopy (SIMS) results indeed reveal incorporation of O or Si and both of those elements should act as a donor in GaN [3,4], yet concentration typically ranges about two orders of magnitude below the observed carrier concentration in highly conducting material [5][6][7][8]. Based on the presently available data, impurities can not be the major source of dopands in GaN.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

et al. 1995

Self Cite

View full text Add to dashboard Cite

Wide bandgap GaN very often shows a high electron concentration. Although several impurities such as O and Si have been identified, the concentration is not high enough to account for the number of free carriers. As a consequence native defects namely the nitrogen vacancies are widely considered to be present at high densities. Several calculations predict different energy levels of this strongly localized defect. We present photoluminescence experiments of wurtzite GaN and AlGaN layers under large hydrostatic pressure to search for localized defects within the questionable energy range of 3.0 to 3.8 eV above the valence band edge.

show abstract

Section: Introductionmentioning

confidence: 99%

Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

et al. 1995

Self Cite

View full text Add to dashboard Cite

show abstract

“…Figure 3 shows the SIMS depth profiles of silicon, oxygen, carbon and hydrogen in the GaN films. Silicon [9] and oxygen [10] have been shown to be shallow donors in GaN. The silicon concentrations in both GaN films, were approximately the same value of 1x 10 17 cm -3 .…”

Section: Resultsmentioning

confidence: 83%

Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substrates

Park

Reitmeier

Davis

2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

The metalorganic chemical vapor deposition of GaN(0001) films using triethylgallium (TEG) and trimethylgallium (TMG) precursors on AlN/6H-SiC(0001) substrates has been conducted using various sets of two temperatures, and the microstructural and chemical differences in the films determined. Growth of films at 980 °C and 1020 °C using TEG and TMG, respectively, resulted in the formation of separate elongated islands. Growth at the optimum temperatures (for our system) of 1020 °C and 1050 °C using these two respective precursors resulted in smooth surface microstructures. Analogous depositions at 1050 °C and 1080 °C resulted in the formation of hillocks over most of the surfaces. In the GaN films grown using TEG at 1020 °C the concentrations of carbon (3x10 17 cm -3) and hydrogen (1x10 18 cm -3) were ~10 times and ~2 times lower than in the films deposited using TMG at 1050 °C. The concentrations of oxygen and silicon were 1x10 17 cm -3 in the films grown using either precursor. Atomic force microscopy of the films grown using TEG and TMG at 1020 °C and 1050 °C, respectively, revealed a similar surface roughness with rms values of ~1.8 nm within 50 µm x 50 µm scans. The full width at half maxima determined from omega scans of the GaN(0002) peak were ~250 arcsec for films grown using both precursors.

show abstract

“…6) Thus, GaN growth on the conductive substrates such as Si, GaAs, and SiC has been extensively studied. Conductive SiC was successfully developed for the substrates of GaN layers, but the cost of the SiC wafers is extremely high.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN on Nitriding TiN Buffer Layers

et al. 2005

View full text Add to dashboard Cite

The breakthrough of GaN epitaxial layer growth with mirror-like surface on the sapphire substrate using a MOCVD (metal organic chemical vapor deposition) technique was made by discovery of an AlN buffer layer prior to GaN deposition about 20 years ago. Since then, extensive efforts have been made to develop a conductive substrate for MOCVD grown GaN layers. In the present study, we explored a possibility of growing continuous, flat GaN layers on a metallic TiN buffer layer, and focused our experiments to investigate the effect of nitrogen contents of the TiN buffer layers on lateral growth of the GaN layers. It was concluded that nitrogen composition in the TiN buffer layers should be higher than that of stoichiometric TiN to grow smooth GaN layers. It was found that nitriding the TiN buffer layers after deposition enriched significantly the nitrogen content compared with increasing the ratio of N 2 to N 2 þ Ar ðN 2 =ðN 2 þ ArÞ ratio) during TiN deposition. Choice of the moderate N 2 =ðN 2 þ ArÞ ratio during TiN deposition and nitriding the TiN buffer layers after TiN deposition were essential to grow continuous, flat GaN layers, since the reduction of the N 2 =ðN 2 þ ArÞ ratio promoted few opening areas in the GaN layers.

show abstract

Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

Cited by 126 publications

References 3 publications

Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substrates

Growth of GaN on Nitriding TiN Buffer Layers

Contact Info

Product

Resources

About