Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

Vilisova, M. D.; Kunitsyn, A. E.; Lavrent'eva, L. G.; Preobrazhenskii, V. V.; Putyato, М. А.; Semyagin, B. R.; Toropov, S. E.; Chaldyshev, V. V.

doi:10.1134/1.1507270

Cited by 8 publications

(18 citation statements)

References 14 publications

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“…Values N(E F ) of deposited GaAs/Si films are closer to the density of LS films obtained by со-evaporation of elements than to their values in films on polycor (figure 2) [8,12]. The hopping conductivity is the main migration mechanism in LT-GaAs [4,5]. The comparison with LT-GaAs enables to suggest that E F is fastened near the middle of the band gap (BG) at =E v +(0.6-0.8) eV in GaAs films deposited by PIA [4][5][6][7].…”

Section: Resultssupporting

confidence: 54%

“…The hopping conductivity is the main migration mechanism in LT-GaAs [4,5]. The comparison with LT-GaAs enables to suggest that E F is fastened near the middle of the band gap (BG) at =E v +(0.6-0.8) eV in GaAs films deposited by PIA [4][5][6][7]. This is due to high concentration of N>10 18 cm -3 of defects like EL2-centers (As Ga 0,+ , pairs As Ga V Ga , As Ga As i ) creating LS deep within BG [4,5,12,13].…”

Section: Resultsmentioning

confidence: 99%

“…Their production has been developed; they obtain a perfect combination of electric and photoelectric parameters, radiation hardness and thermal stability of properties [1][2][3][4]. Uniting these materials on one substrate is an upcoming trend in optimization of the optoelectronic device production technology [1][2][3]5].…”

Section: Introductionmentioning

confidence: 99%

“…Electric characteristics and charge carriers transfer mechanisms in crystalline epitaxial grown с-GaAs vary over a wide range [3][4][5][6]. The unique properties of amorphocrystalline а-GaAs films deposited from RF-plasma by impulse methods [6,7], thermal deposition, co-evaporation of the elements [8] and laser deposition [9] enable to use them in the production of layers that match lattice parameters during the deposition of GaAs/Si and heterostructures on their basis.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Кабышев¹,

Конусов²,

Ремнев³

et al. 2014

J. Phys.: Conf. Ser.

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Abstract. Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10 -2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Кабышев¹,

Конусов²,

Ремнев³

et al. 2014

J. Phys.: Conf. Ser.

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“…Their incorporation in GaAs when epitaxial growth is mainly based on replacing Ga in the lattice, which leads to ntype doping in GaAs (9,10). Both Si and Ge-doped GaAs epitaxial layers have been achieved, using 0.1% methylsilane (CH 3 SiH 3 ) and 2% germane (GeH 4 ) gases respectively, in addition to the main GaAs precursors.…”

Section: Si and Ge-doped Gaas Epitaxymentioning

confidence: 99%

Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

Sammak¹,

Boer²,

Bogaard³

et al. 2010

ECS Trans.

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A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Sibased depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH 3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH 3 concentration, 0.7 % in H 2 , is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.

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Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

Lavrentieva

Vilisova²,

Bobrovnikova

et al. 2006

Russ Phys J

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621.315.592:548.552.22 I. V. Ivonin, 1 V. V. Preobrazhenskii, 3 and V. V. Chaldyshev 4The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defects is analyzed. A comparison is made between the defect formation processes occuring during the epitaxial growth and post-growth annealing of the layers.

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Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

Cited by 8 publications

References 14 publications

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

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