Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium

Abstract

CdS thin films deposited from chemical bath containing citratocadmium(II) and thiourea are intrinsic and highly photosensitive. In the present letter, we discuss the conversion of such films to n type by thermal diffusion of indium from an evaporated 50 nm indium film deposited on the CdS thin film. The process which takes place in the temperature range of 250 °C–350 °C involves the formation of an In2O3 surface layer which acts as a barrier preventing the outdiffusion of indium. This allows indium to diffuse into the CdS film and results in an indium-doped CdS thin film. The electrical conductivity of such films is about 300 Ω−1 cm−1. All beneficial optical properties of chemically deposited CdS thin films for application as a window material in heterojunction optoelectronic devices are retained.

Studies on the properties of cdS films deposited from pH-controlled growth solutions

“…The relative intensity of the (002) reflection indicates a preferred orientation along the [002] direction. These results are in agreement with structural data reported in the literature for chemically deposited CdS films prepared with a similar reaction solution 35 . Figure 2 shows the XRD patterns for the B CdS films.…”

“…For solution B, KOH and a pH-10 buffer were included in the precursor solution to attain the required pH and to control the pH of the solution during the entire deposition process. The deposition of A films was done in a reactive solution prepared by the sequential addition of 25 mL of 0.1 M CdCl 2 , 20 mL of 1 M C 6 H 5 O 7 Na 3 (sodium citrate), 1mL of 1M NH 4 OH and 10 mL of 1 M CS(NH 2 ) 2 [35] . Deionized water was added to the solution to produce a total volume of 100 mL.…”

The role of glutathione on shape control and photoelectrical property of cadmium sulfide nanorod arrays

“…Unfortunately, Jsc, Voc, and FF of FTO/CdS NRs-annealed/P3HT/Au dropped, respectively, to 0.357 mA/cm 2 , 0.200 V, and 0.322, resulting in a PCE of 0.023%. It may be caused by the partial oxidization of the surface of CdS nanorod to CdO, as previously reported [36][37][38]. The CdO layer between P3HT and CdS may act as defect centers to prevent efficient electron transport from P3HT to CdS or/and may act as the recombination centers to capture the electrons.…”

Indium doping on the structural, surface and optical properties of CdS thin films prepared by ultrasonic spray pyrolysis method

“…In addition, it can be used in many fields such as thermoelectric effect, quantum dots for various applications, luminescence, optoelectronic devices, photocatalytic hydrogen evolution, transistors and so on [8][9][10][11][12][13]. Many elements, like Zn [14][15][16], Ce [17], Mn [18], Cu [19], Ni [20], Fe [21] and In [22,23] have been doped into CdS to demonstrate tunable optical and electrical properties.…”