“…The strongest peak around 30° in Figure 2 is the characteristic peak (1 1 2 n +1) of the bismuth‐layered structure reported in the literature. [ 8,25,32 ] All peaks of BaBi 4 Ti 4 O 15 and Ba 2 Bi 4 Ti 5 O 18 were well in accord with the standard diffraction data, respectively. However, there are obvious second phases (around 33° and 46°) in Ba 3 Bi 4 Ti 6 O 21 and Ba 4 Bi 4 Ti 7 O 24 ceramics.…”
Section: Resultssupporting
confidence: 76%
“…The The strongest peak around 30°in Figure 2 is the characteristic peak (1 1 2 nþ1) of the bismuth-layered structure reported in the literature. [8,25,32] All peaks of BaBi ficult to synthesize may be that the structural distortion increases with the decrease of the geometrical tolerance factor, which leads to the excessive distortion of the perovskite structure and the failure to stabilize it. [33,34] It is also known that there is a size mismatch in the a-b plane between the (Bi 2 O 2 ) 2þ perovskite layers.…”
Section: Resultsmentioning
confidence: 99%
“…High-temperature dielectric materials (up to 250 °C) are a necessity in both cases. [7][8][9] More importantly, dielectric capacitors are required to possess excellent temperature stability due to the inevitable joule heat generated during the operation of electronic components. [10] To meet the aforementioned strict requirements, the research on dielectric materials that can work under high-temperature circumstances has become a worldwide research hotspot.…”
Bismuth‐layered ferroelectric materials with Aurivillius structure are the potential materials for high‐temperature ferroelectric materials because of their high Curie temperature and excellent ferroelectric fatigue resistance. Herein, the Aurivillius phase relaxation ferroelectrics as Ban−3Bi4TinO3n+3 (n = 4–7) ceramics are studied. The layered structures are controlled by adjusting the number of BO6 octahedrons and (Bi2O2)2+ layers. The dielectric temperature stability and voltage resistance of bismuth barium titanate ceramics are improved. The influence of composition and microstructure on their electrical properties is explored. The relationship between dielectric properties and storage properties of bismuth barium titanate ceramics and the number of layers is obtained. Ba2Bi4Ti5O18 ceramics show the best performance with an energy storage density of up to 1.16 J cm−3 and a high efficiency of ≈87.2% (under 250 kV cm−1). This work provides key materials and technologies for the next generation of energy storage capacitors that can be applied in high‐temperature environments as well as a new reference for the development of dielectric materials and the functional optimization of other Aurivillius phase ceramic materials.
“…The strongest peak around 30° in Figure 2 is the characteristic peak (1 1 2 n +1) of the bismuth‐layered structure reported in the literature. [ 8,25,32 ] All peaks of BaBi 4 Ti 4 O 15 and Ba 2 Bi 4 Ti 5 O 18 were well in accord with the standard diffraction data, respectively. However, there are obvious second phases (around 33° and 46°) in Ba 3 Bi 4 Ti 6 O 21 and Ba 4 Bi 4 Ti 7 O 24 ceramics.…”
Section: Resultssupporting
confidence: 76%
“…The The strongest peak around 30°in Figure 2 is the characteristic peak (1 1 2 nþ1) of the bismuth-layered structure reported in the literature. [8,25,32] All peaks of BaBi ficult to synthesize may be that the structural distortion increases with the decrease of the geometrical tolerance factor, which leads to the excessive distortion of the perovskite structure and the failure to stabilize it. [33,34] It is also known that there is a size mismatch in the a-b plane between the (Bi 2 O 2 ) 2þ perovskite layers.…”
Section: Resultsmentioning
confidence: 99%
“…High-temperature dielectric materials (up to 250 °C) are a necessity in both cases. [7][8][9] More importantly, dielectric capacitors are required to possess excellent temperature stability due to the inevitable joule heat generated during the operation of electronic components. [10] To meet the aforementioned strict requirements, the research on dielectric materials that can work under high-temperature circumstances has become a worldwide research hotspot.…”
Bismuth‐layered ferroelectric materials with Aurivillius structure are the potential materials for high‐temperature ferroelectric materials because of their high Curie temperature and excellent ferroelectric fatigue resistance. Herein, the Aurivillius phase relaxation ferroelectrics as Ban−3Bi4TinO3n+3 (n = 4–7) ceramics are studied. The layered structures are controlled by adjusting the number of BO6 octahedrons and (Bi2O2)2+ layers. The dielectric temperature stability and voltage resistance of bismuth barium titanate ceramics are improved. The influence of composition and microstructure on their electrical properties is explored. The relationship between dielectric properties and storage properties of bismuth barium titanate ceramics and the number of layers is obtained. Ba2Bi4Ti5O18 ceramics show the best performance with an energy storage density of up to 1.16 J cm−3 and a high efficiency of ≈87.2% (under 250 kV cm−1). This work provides key materials and technologies for the next generation of energy storage capacitors that can be applied in high‐temperature environments as well as a new reference for the development of dielectric materials and the functional optimization of other Aurivillius phase ceramic materials.
“…These vacancies jump to assemble in spaces having low free energy like that in grain boundaries. Gathering of these oxygen vacancies in the grain boundaries sites roots realm pinning and consecutively bound polarization switching in the compound [ [40] , [41] , [42] ]. Fig.…”
“…There are many examples regarding the unique electrical properties such as excellent piezoelectricity, superconductivity or superior mechanical performances, including enhanced toughness or high-temperature strength, which were achieved by the microstructural design for ferroelectric/piezoelectric ceramics, bioceramics, structural ceramics, metal-ceramic composites, etc. [6][7][8][9][10][11][12].…”
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