Doping level-dependent dry-etch damage in n-type GaN

Abstract

The electrical effects of dry-etch on n-type GaN by an inductively coupled Cl 2 /CH 4 /H 2 /Ar plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization methods. The specific contact resistivity (ρ c ) of the ohmic contact was decreased, while the leakage current in the Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to dopant concentration in terms of the ρ c of the ohmic contact. This can be attributed to effects such as the formation of deep acceptors as well as the electron-enriched surface layer within the depletion layer. Furthermore, the thermal annealing process enhanced the ohmic and Schottky properties of the heavily damaged surface.

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

“…Generally, the epitaxial growth of III-nitrides has focused on the improvement of optical and crystal qualities of InGaN multi-quantum wells (MQWs) since they are used as active medium of AlInGaN-based laser diodes (LDs) as a lighting source for optical storage system and mobile display systems [1][2][3][4][5][6][7]. Recently, although the reliability of AlInGaN-based LDs has been drastically improved by the introduction of GaN substrate with low dislocation density, there are some reliability problems in the AlInGaN-based LD/LEDs [1].…”