2017
DOI: 10.1016/j.apsusc.2017.06.139
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Doping induced modifications in the electronic structure and magnetism of ZnO films: Valence band and conduction band studies

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Cited by 19 publications
(5 citation statements)
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“…Substitutional incorporation of Fe 3+ ions at Zn 2+ sites leads to tetrahedral crystal field around Fe 3+ ions surrounded by O 2− ions. The first excited 4 G state of free d 5 ions splits into 4 T 1 , 4 T 2 , 4 E and 4 A 1 in the order of increasing energy under this crystal field effects. 17 The observed transitions are from the 6 A 1g ground state to 4 T 1 , 4 T 2, 4 E and 4 A 1 excited states.…”
Section: ■ Results and Discussionmentioning
confidence: 96%
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“…Substitutional incorporation of Fe 3+ ions at Zn 2+ sites leads to tetrahedral crystal field around Fe 3+ ions surrounded by O 2− ions. The first excited 4 G state of free d 5 ions splits into 4 T 1 , 4 T 2 , 4 E and 4 A 1 in the order of increasing energy under this crystal field effects. 17 The observed transitions are from the 6 A 1g ground state to 4 T 1 , 4 T 2, 4 E and 4 A 1 excited states.…”
Section: ■ Results and Discussionmentioning
confidence: 96%
“…It has been reported that long-range ferromagnetic ordering can occur by coupling Fe 2+ ions with intrinsic defects like oxygen vacancies. The ferromagnetism observed in Fe-doped ZnO is due to Fe ions (Fe 2+ and Fe 3+ states), which are tetrahedrally incorporated, , whereas Fe 3+ , which exists in octahedral sites, destabilizes the ferromagnetism . Chen et al .…”
Section: Introductionmentioning
confidence: 99%
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“…As a result, given the experimental setting, there is a significant possibility that MM will be observed at RT in association with V O . Moreover, the vacancy atom, defect pairs, and co-doped elements have demonstrated a considerable impact in MM [1,35,37,40,41]. In addition to point defects, oxygen may also be seen at the interstitial site in octahedral and tetrahedral configurations, with corresponding distances of around 1.95 Å and 2.63 Å, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Recently theoretical and experimental studies agree that defect induced magnetization in ZnO is promoted by unpaired 2p electrons at O sites surrounding the V Zn and other authors describe the role of oxygen vacancies in the magnetic order . Particularly in Li et al the authors describe a strong correlation between the presence of V O and saturation magnetization.…”
Section: Introductionmentioning
confidence: 91%