Doping Graphene with Substitutional Mn

Abstract

We report the incorporation of substitutional Mn atoms in high-quality, epitaxial 1 graphene on Cu(111), using ultra-low energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e. local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced towards the Cu surface, i.e. effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional Mn to a concentration of the order of 0.04%, with negligible structural disorder (other than the Mn substitution), retains the Dirac-like band structure of pristine graphene on Cu(111), making it an ideal system in which to study the interplay between local magnetic moments and Dirac electrons. Our work also establishes that ultra-low energy ion implantation is suited for substitutional magnetic doping of graphene; given the flexibility, reproducibility and scalability inherent to ion implantation, our work creates numerous opportunities for research on magnetic functionalization of graphene and other 2D materials.

Research of Low-Dimensional Carbon-Based Magnetic Materials

“…First of all, a simple mixing of magnetic particles in which the magnetic particles are physically adsorbed on GR (graphene) sheets, but the complex is not stable and cannot withstand harsh conditions. , The second method is the in situ synthesis of magnetism on GR (graphene). This in situ method can make magnetic particles more uniformly dispersed on graphene sheets, such as the in situ synthesis of CoFe 2 O 4 particles and GO using ultralow-energy ion implantation . The third method is covalent functionalization .…”

“…The AHE of the Ni nanoisland/graphene hybrid can be tuned by the gate voltage, as shown in Figure d. Yan and co-workers stably anchored cobalt atoms in the graphene lattice with the help of coordinating nitrogen atoms, achieving a strong room-temperature intrinsic ferromagnetism up to 400 K and revealing that the carriers in carbon materials are important for the role of ferromagnetic coupling; Lin et al found that doping transition metal Mn atoms with a substitution concentration of 0.04% into high-quality epitaxial graphene can retain the unique energy band structure of the original graphene, and the graphite magnetic functionalization of GR and other 2D materials has created many opportunities …”

Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene

“…8 Although ion implantation in this energy regime (tens of electronvolts) is effective in producing substitutional incorporation with minimal disorder, the resulting systems are highly complex, as nonsubstitutional incorporation of the implanted atoms, defect formation, and surface contamination also occur. 8 Here, we investigate these undesired effects associated with ULE ion implantation as well as how they can be mitigated, in particular using thermal annealing in ultrahigh vacuum (UHV). In addition to giving insight into the physicochemical processes, this work provides useful guidelines for future experimental studies on ULEimplanted 2D materials, in particular based on widely used techniques such as photoemission spectroscopies and scanning probe microscopies.…”

Selectable Growth and Electronic Structures of Monolayer 1T‐VSe2 and V5Se8 Films on Bilayer Graphene

“…[19,20] The novel optoelectronic properties of these materials have potential applications in field-effect transistors (FETs) [21,22] and photodetectors. [23][24][25] To further induce magnetism in 2D materials, atomic intercalation, or doping into layered 2D materials, such as magnetic doping in graphene, [26,27] is an effective method. Compared to graphene itself, the band structure of magnetically doped graphene undergoes many changes because of the electromagnetic interaction between the local magnetic moments and Dirac electrons.…”