Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Burgess, Timothy; Saxena, Dhruv; Mokkapati, Sudha; Li, Zhe; Hall, Christopher R.; Davis, Jeffrey A.; Wang, Yuda; Smith, L. M.; Fu, Lan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1038/ncomms11927

Cited by 73 publications

(98 citation statements)

References 50 publications

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“…The in our NWs with a diameter of 400 nm has the theoretical value of ~ 2850 cm -1 , which is comparable with 3300 cm -1 derived from the power dependent measurements. This value is higher than those previously reported for InGaAs/GaAs and GaAs/AlGaAs-based NW lasers [10,12,39] with the NW core as the active gain medium, i.e. ~ 1000 -2000 cm -1…”

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confidence: 53%

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

et al. 2017

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Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III–V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic “S”-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, g th , of 3300 cm–1 and a spontaneous emission coupling factor, β, of 0.045. The dominant lasing peak is identified to arise from the HE21b cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional passivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.

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confidence: 53%

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

et al. 2017

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“…Moreover, beyond the threshold, the gain is clamped to a fixed value, the spontaneous emission no longer increases with the pump intensity and the photon number fluctuation is quenched. Gain clamping is used as an indication of lasing 37,38 but, to date, is unexplored for random lasing. The extent of the superlinear growth of the population of the lasing modes is determined by the β factor, that is, the fraction of spontaneous emission in the lasing mode.…”

Section: Random Lasingmentioning

confidence: 99%

Determining random lasing action

Sapienza

2019

Nat Rev Phys

103

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| Random lasing -for which disorder is exploited to enhance stimulated emissionhas emerged as a paradigmatic phenomenon of complex lasers. Random lasers feature unique properties such as tunable coherence and reconfigurable spectral emission. Nevertheless, their complexity sets them apart from conventional lasers, making it challenging to determine whether random lasing is occurring. In this Expert Recommendation, I discuss experimental methods required to properly assess and demonstrate random lasing action.

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“…Theoretical studies have proposed possibilities to enhance HHG in solids by quantum confinement [35], inhomogeneous fields [36], or substitutional doping [37]. Indeed, impurities typically influence the physical properties of a solid, allowing one to control processes in the target material for various applications (see, e.g., the recent works [38,39]). Doping-induced impurities are therefore expected to have impact on HHG in solids.…”

Section: Introductionmentioning

confidence: 99%

Enhanced high-order harmonic generation in donor-doped band-gap materials

Hansen

Madsen

2019

Phys. Rev. A

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We find that a donor-doped band-gap material can enhance the overall high-order harmonic generation (HHG) efficiency by several orders of magnitude, compared with undoped and acceptordoped materials. This significant enhancement, predicted by time-dependent density functional theory simulations, originates from the highest occupied impurity state which has an isolated energy located within the band gap. The impurity-state HHG is rationalized by a three-step model, taking into account that the impurity-state electron tunnels into the conduction band and then moves according to its band structure until recombination. In addition to the improvement of the HHG efficiency, the donor-type doping results in a harmonic cutoff different from that in the undoped and acceptor-doped cases, explained by semiclassical analysis for the impurity-state HHG.

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Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Cited by 73 publications

References 50 publications

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

Determining random lasing action

Enhanced high-order harmonic generation in donor-doped band-gap materials

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