Doping Effects on the Thermoelectric Properties of Cu&lt;SUB&gt;3&lt;/SUB&gt;SbSe&lt;SUB&gt;4&lt;/SUB&gt;

Skoug, Eric J.; Cain, Jeffrey D.; Majsztrik, Paul; Kirkham, Melanie J.; Lara‐Curzio, Edgar; Morelli, Donald T.

doi:10.1166/sam.2011.1189

Cited by 53 publications

(47 citation statements)

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“…7 shows the carrier density dependence of the Seebeck coefficient and Hall mobility at room temperature, together with the data previously reported for this system. 23,33,42 We found that the SPB model with acoustic phonon scattering assumption could well explain both properties. From the carrier density dependence of the Seebeck coefficient (the Pisarenko relation), it seems that all the measured S are consistent with a constant density-of-state (DOS) effective mass, m* ¼ 1.5 m e .…”

Section: Resultsmentioning

confidence: 70%

Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap

et al. 2014

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Cu 3 SbSe 4 -based compounds composed of earth-abundant elements have been found to exhibit good thermoelectric performance at medium temperatures. High zT values were achieved in previous studies, but further insight into the transport mechanism as well as some key material parameters is still needed. In this work, we studied the electrical and thermal transport properties of Sn-doped Cu 3 SbSe 4 between 300 K and 673 K. It was found that the single parabolic band model explains the electrical transport very well.Experimentally, we determined the band gap to be around 0.29 eV. The density-of-state effective mass was found to be about 1.5 m e for the doped samples. The transport properties suggested degeneracy splitting near the valence band maximum that was not captured by previous band structure calculations.The maximum zT $ 0.70 was obtained at 673 K, and the optimized carrier density was $1.8 Â 10 20 cm À3, and the potential for further improvement of zT via material engineering is briefly discussed.

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Section: Resultsmentioning

confidence: 70%

Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap

et al. 2014

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“…Doping was widely employed to improve the carrier concentration and the electrical conductivity, such as CuIn(Ga) 1−x M x Te 2 (M=Zn, Mn, Cd, Hg, Ni, Ag, Gd) [114][115][116][117][118], Cu 1−x Fe 1+x S 2 [119], Cu 3 Sb 1−x M x Se 4 (M=Al, In, Sn, Ge, Bi) [35,[120][121][122] and Cu 2 Cd 1−x In x SnSe 4 [123]. Introducing vacancies is another practical way for the electrical transport optimization as well as the lattice thermal conductivity minimizing.…”

Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

Copper chalcogenide thermoelectric materials

et al. 2018

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Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency, tunable transport properties, high elemental abundance and low toxicity. In this review, we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu 2 X (X=S, Se, Te) binary compounds as well as their multinary derivatives. These materials have the general features of two sublattices to decouple electron and phonon transport properties. On the one hand, the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity. On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance. For specific material systems, we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping, alloying, band engineering and nanostructure architecture, covering nearly all the material scale, are also presented. Finally, the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.

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“…Recently, copper-based chalcogenide semiconductors have attracted much attention because of their relatively high carrier mobility (µ H ) and low κ, such as CuGa(In)Te 2 , Cu 2 CdSnX 4 (X = Se, S), Cu 2 SnSe 3 , and Cu 3 SbSe 4 [11][12][13][14]. Among these compounds, ternary Cu 3 SbSe 4 semiconductor has emerged as a promising thermoelectric material because of its narrow band gap and large carrier effective mass.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Zhao

2017

Energies

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Doping Effects on the Thermoelectric Properties of Cu<SUB>3</SUB>SbSe<SUB>4</SUB>

Cited by 53 publications

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Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap

Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap

Copper chalcogenide thermoelectric materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

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Doping Effects on the Thermoelectric Properties of Cu<SUB>3</SUB>SbSe<SUB>4</SUB>

Cited by 53 publications

References 0 publications

Thermoelectric properties of Sn-doped p-type Cu3SbSe4: a compound with large effective mass and small band gap

Thermoelectric properties of Sn-doped p-type Cu3SbSe4: a compound with large effective mass and small band gap

Copper chalcogenide thermoelectric materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

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Product

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Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap

Thermoelectric properties of Sn-doped p-type Cu₃SbSe₄: a compound with large effective mass and small band gap