Doping Effect of Organosulfonic Acid in Poly(3-hexylthiophene) Films for Organic Field-Effect Transistors

Nam, Sungho; Kim, Joonhyeon; Lee, Hyena; Kim, Hwajeong; Ha, Chang‐Sik; Kim, Youngkyoo

doi:10.1021/am300141m

Cited by 51 publications

(48 citation statements)

References 31 publications

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“…Molecule-doped conjugated polymers have been extensively applied in solution-processed transistors, [1][2][3] light emitting diodes, [4,5] and photovoltaic cells [6][7][8] due to significant performance improvement compared to the pristine state. Doping is an important technique to control the electrical properties of polymer layers: [9,10] it increases the conductivity by several orders of magnitude even at minimal doping concentration, [9,11,12] and decreases the charge injection barrier resulting from the position shift of Fermi level relative to the carrier level.…”

Section: Introductionmentioning

confidence: 99%

Energetics at Doped Conjugated Polymer/Electrode Interfaces

Bao

Liu

Gao

et al. 2014

Adv Materials Inter

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Abstract:The energy level alignment at molecule-doped conjugated polymer/electrode interface is investigated. We find regular plots with a constant thickness-independent displacement away from the original energy level alignment behavior of the pristine polymer at low to intermediate level for molecule-doped conjugated polymer/conducting substrate interfaces.We proposed that two combined processes control the energy level alignment: (i) equilibration of the Fermi level due to oxidation (or reduction) of polymer sites at the interface as per the integer charge transfer model and (ii) a double dipole step induced by image charge from the dopant-polymer charge transfer complex that cause a shift of the work function. Such behavior is expected to hold for all low to intermediate level doped organic semiconductor systems.

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Section: Introductionmentioning

confidence: 99%

Energetics at Doped Conjugated Polymer/Electrode Interfaces

Bao

Liu

Gao

et al. 2014

Adv Materials Inter

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“…Further reduction of the operating voltage can also be possible by optimizing the OFET layers using a better gate insulating layer, as shown in Supplementary Figure S6, and higher regioregularity P3HT, as reported in our previous work. 26 The characteristics of the devices are summarized in Supplementary Table S1. The memory window of the PEW-OFET was 30-33 V, which is noticeably greater than the 1-2 V for the OFET without the SD-PARA layer.…”

Section: Resultsmentioning

confidence: 99%

Organic nonvolatile memory transistors with self-doped polymer energy well structures

Nam

Hahm

et al. 2013

NPG Asia Mater

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Developing organic nonvolatile memory devices with a writing/reading/erasing logic function in actual array structures is extremely important for realizing low-cost lightweight/flexible plastic electronic systems. Here, we demonstrate that organic field-effect transistors (OFETs) with a polymer energy well structure (PEW-OFET) exhibit excellent nonvolatile memory performances. The PEW structure is created by sandwiching a self-doped poly(o-anthranilic acid) (SD-PARA) nanolayer (high dielectric constant, k ¼ 14) between two low-dielectric polymer layers (k ¼ 2-4). The primary idea behind this concept is the rapid storage and retrieval of charge carriers in the PEW layer during operation due to the high k feature of the SD-PARA nanolayer, which aids the rapid transport of charge carriers inside, whereas the stored charges are safely trapped due to the two low k layers. The results indicate that the PEW-OFET memory devices exhibit outstanding retention characteristics upon continuous reading up to 2000 s after writing, whereas their excellent writing/reading/erasing/reading cyclability is demonstrated in a test with 43000 cycles. Therefore, the present simple yet cost-effective PEW-OFET concept is expected to significantly contribute to the development of low-cost plastic memory array devices because all processes can be inexpensively performed at low temperatures and additional logic transistors are unnecessary.

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“…활발히 보고되고 있다 [1,2] . 유연소자에 기반이 되는 유기 반도체 는 저온에서 다양한 유연 기판 위에 화학적 센서 [3,4] , 로직소자 [5] , 디스플레이 [6] 같은 다양한 소자기술 개발이 가능하다.…”

Section: 서 론 최근 유연소자 기술의 등장과 함께 기존의 반도체 산업에 주축인 실리콘 기반 제조기술의 단점을 보완하기unclassified

Laser Sintering of Silver Nanoparticle for Flexible Electronics

Jia¹,

Park²,

Noh³

et al. 2015

Journal of The Korean Society of Manufacturing Technology Engin

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Article history:We present a fine patterning method of conductive lines on polyimide (PI) and glass substrates using silver (Ag) nanoparticles based on laser scanning. Controlled laser irradiation can realize selective sintering of conductive ink without damaging the substrate. Thus, this technique easily creates fine patterns on heat-sensitive substrates such as flexible plastics. The selective laser sintering of Ag nanoparticles was managed by optimizing the conditions for the laser scan velocity (1.0-20 mm/s) and power (10-150 mW) in order to achieve a small gap size, high electrical conductivity, and fine roughness. The fabricated electrodes had a minimum channel length of 5 µm and conductivity of 4.2 × 10 5 S/cm (bulk Ag has a conductivity of 6.3 × 10 5 S/cm) on the PI substrate. This method was used to successfully fabricate an organic field effect transistor with a poly(3-hexylthiophene) channel. . 유연소자에 기반이 되는 유기 반도체 는 저온에서 다양한 유연 기판 위에 화학적 센서 [3,4] , 로직소자 . 이러한 유기반도체를 이용한 유연소자의 전극은 증착 (evaporation) [4,12] , 잉크젯 프린팅(inkjet printing) [7] 그리고 rollto-roll(R2R)

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Doping Effect of Organosulfonic Acid in Poly(3-hexylthiophene) Films for Organic Field-Effect Transistors

Cited by 51 publications

References 31 publications

Energetics at Doped Conjugated Polymer/Electrode Interfaces

Energetics at Doped Conjugated Polymer/Electrode Interfaces

Organic nonvolatile memory transistors with self-doped polymer energy well structures

Laser Sintering of Silver Nanoparticle for Flexible Electronics

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