Doping dependence of the electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ba</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">K</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">BiO</mml:mi

Kobayashi, Koichi; Mizokawa, T.; Ino, A.; Matsuno, Jobu; Fujimori, A.; Samata, H.; Mishiro, A.; Nagata, Y.; Groot, Frank M. F. de

doi:10.1103/physrevb.59.15100

Cited by 16 publications

(12 citation statements)

References 28 publications

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“…A consistent result has been recently obtained by x-ray-absorption spectroscopy ͑XAS͒. 20 The absorption edge gradually makes a downward shift in accordance with the doping level, and finally a Fermi-edge enhancement appears in the metallic region. We demonstrate part of this tendency in a theoretical simulation.…”

Section: Introductionsupporting

confidence: 66%

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Iwano

Nasu

1998

Phys. Rev. B

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A four-step scenario for the phase changes in Ba (1Ϫx) K x BiO 3 is proposed. This aims at giving a global view of the whole evolution process induced by hole doping. For this purpose, we utilize simple but standard methods such as the Hartree-Fock approximation and the adiabatic approximation. The parent material is BaBiO 3 , whose ground state is well established as a three-dimensional charge-density wave ͑CDW͒. While hole doping on this material is very light, we observe in the simulation that the hole bipolaron ͑BP͒ state is a local minimum with a higher energy than a pair of extended holes. We call this stage of doping the first step. Beyond a rather low critical concentration of holes, however, the second step emerges, where the BP state is stabilized as the lowest one. Moreover, upon continuing the doping, the system loses the initial long-range order of CDW and becomes disordered only with local CDW domains. The absorption spectrum in this third step shows a main band that moves to lower energies in accordance with the hole concentration. Lastly, at the final stage of doping, the pseudogap in the electronic density of states ͑DOS͒ collapses and the system becomes metallic. The aforementioned local CDW, however, still remains with reduced but finite fraction. Thus, this fourth step is characterized by a rather anomalous state of the metal. This scenario is qualitatively consistent with the experimental facts and gives a reasonable description of the evolution of this material from very lightly doped states to heavily doped ones. ͓S0163-1829͑98͒05912-8͔

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Section: Introductionsupporting

confidence: 66%

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Iwano

Nasu

1998

Phys. Rev. B

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“…In order to confirm this, the energy shifts of the core levels have been measured as in the previous studies on other filling-controlled materials. [17][18][19][20][21] As shown in Fig. 3, the La, Pb, and S core levels follow the shift of the S 3p valence band within experimental uncertainties.…”

Section: A Chemical-potential Shiftsupporting

confidence: 56%

“…The present result is remarkably similar to the cases of the other filling-controlled systems in that all the core levels except for the core level of the transition-metal element are shifted by the same amount owing to the chemical-potential shift. [17][18][19][20][21] Thus, we identify the energy shift of the S 3p valence band shown in Fig. 2͑c͒ as representing the chemicalpotential shift.…”

Section: A Chemical-potential Shiftmentioning

confidence: 99%

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard systemLa1.17−xPbx
Ino
¹
,
Okane
²
,
Fujimori
³

et al. 2004
Phys. Rev. B
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The filling-controlled metal-insulator transition ͑MIT͒ in a two-dimensional Mott-Hubbard system La 1.17Ϫx Pb x VS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential abruptly jumps by ϳ0.07 eV between xϭ0.15 and 0.17, indicating that a charge gap is opened at x Ӎ0.16 in agreement with the Mott insulating state of the d 2 configuration. When holes or electrons are doped into the Mott insulator of xӍ0.16, the gap is filled and the photoemission spectral weight at , (), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ()→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at Tϭ300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.

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“…Reduced oxygen-hole character in BKSO is revealed via X-ray absorption spectroscopy, consistent with its positive Δ CT . The oxygen K-edge, which probes unoccupied oxygen 2p states, is measured for the optimally doped BKSO and compared with a BKBO reference 41 at similar x in Fig. 4d.…”

mentioning

confidence: 99%

Superconductivity in (Ba,K)SbO3

et al. 2022

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Abstract(Ba,K)BiO3 constitute an interesting class of superconductors, where the remarkably high superconducting transition temperature Tc of 30 K arises in proximity to charge density wave order. However, the precise mechanism behind these phases remains unclear. Here, enabled by high-pressure synthesis, we report superconductivity in (Ba,K)SbO3 with a positive oxygen–metal charge transfer energy in contrast to (Ba,K)BiO3. The parent compound BaSbO3−δ shows a larger charge density wave gap compared to BaBiO3. As the charge density wave order is suppressed via potassium substitution up to 65%, superconductivity emerges, rising up to Tc = 15 K. This value is lower than the maximum Tc of (Ba,K)BiO3, but higher by more than a factor of two at comparable potassium concentrations. The discovery of an enhanced charge density wave gap and superconductivity in (Ba,K)SbO3 indicates that strong oxygen–metal covalency may be more essential than the sign of the charge transfer energy in the main-group perovskite superconductors.

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Doping dependence of the electronic structure ofBa1−xKxBiO

Cited by 16 publications

References 28 publications

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard systemLa1.17−xPbx
Ino
¹
,
Okane
²
,
Fujimori
³

et al. 2004
Phys. Rev. B
Self Cite
7
0
4
0
View full text Add to dashboard Cite

Superconductivity in (Ba,K)SbO3

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Doping dependence of the electronic structure ofBa1−xKxBiO

Cited by 16 publications

References 28 publications

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Four-step scenario for doping-induced phase changes in a three-dimensional charge-density-wave system

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard systemLa1.17−xPbxIno1, Okane2, Fujimori3 et al. 2004Phys. Rev. BSelf Cite7040View full textAdd to dashboardCite

Superconductivity in (Ba,K)SbO3

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Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard systemLa1.17−xPbx
Ino
¹
,
Okane
²
,
Fujimori
³

et al. 2004
Phys. Rev. B
Self Cite
7
0
4
0
View full text Add to dashboard Cite