Doping dependence of the chemical potential in cuprate high-Tc superconductors I. La2−xSrxCuO4

Rietveld, G.; Glastra, M.; Marel, D. van der

doi:10.1016/0921-4534(94)02395-6

Cited by 23 publications

(21 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3. These data are in very good agreement with those recently reported for codeposited (MBE) [37], sputtered [38,39] and laser-ablated '214' thin films [40,41]. Although there is an experimental error (±0.01 Å) in the determination of the α-axis lattice parameter for the thin films, a comparison between the data for films and bulk materials indicates an average difference of 0.03-0.06 Å , which increases with the strontium content in the range 0.07 < x < 0.24.…”

Section: Lattice Mismatch 321 Structural Properties: Tensile Mismatchsupporting

confidence: 81%

“…At optimal doping for the thickest files the maximum critical temperature observed is about 28 K; away from optimal doping, the critical temperature decreases. The observed maxima of 23 K and 28 K for thin and thick films, respectively, are in good agreement with those reported in the literature [37,41]. The structural study presented above indicates the presence of significant tensile strain, i.e.…”

Section: Transport Propertiessupporting

confidence: 80%

See 1 more Smart Citation

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties

Locquet

Williams

1997

Acta Phys. Pol. A

View full text Add to dashboard Cite

In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-Tc thin films is highlighted and mustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the 1attice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

show abstract

Section: Lattice Mismatch 321 Structural Properties: Tensile Mismatchsupporting

confidence: 81%

Section: Transport Propertiessupporting

confidence: 80%

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties

Locquet

Williams

1997

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…This is precisely what would be expected from the models of hole-driven phase separation discussed in Section X below. Furthermore, there is evidence for two Sr environments in LSCO [395].…”

Section: Chemical Potentialmentioning

confidence: 99%

A survey of the Van Hove scenario for high-tc superconductivity with special emphasis on pseudogaps and striped phases

Markiewicz

1997

Journal of Physics and Chemistry of Solids

369

280

View full text Add to dashboard Cite

The Van Hove singularity (VHS) provides a paradigm for the study of the role of peaks in the density of states (dos) on electronic properties. More importantly, it appears to play a major role in the physics of the high-Tc superconductors, particularly since recent photoemission studies have found that the VHS is close to the Fermi level in most of the high-Tc cuprates near the composition of optimum Tc. This paper offers a comprehensive survey of the VHS model, describing both theoretical properties and experimental evidence for the picture. Special topics discussed include a survey of the Fermi surfaces of the cuprates and related compounds, and an analysis of the reliability of the slave boson approach to correlation effects. While many properties of the cuprates can be qualitatively understood by a simple rigid-band-filling model, this is inadequate for more quantitative results, since correlation effects tend to pin the Fermi level near the VHS over an extended doping range, and can lead to a nanoscale phase separation. Furthermore, the peaks in the dos lead to competition from other instabilities, both magnetic and structural (related to charge density waves). A novel form of dynamic structural instability, involving dynamic VHS-Jahn-Teller effects has been predicted. Scattered through the literature, there is considerable experimental evidence for both nanoscale phase separation of holes, and for local, possibly dynamic, structural disorder. This review attempts to gather these results into a comprehensive database, to sort the results, and to see how they fit into the Van Hove scenario. Recent experiments on underdoped cuprates are found to provide a strong confirmation that the pseudogap is driven by a splitting of the VHS degeneracy.

show abstract

“…Experimentally, whether ∆µ vanishes or not appears to be cuprate dependent. For example, in La 2−x Sr x CuO 4 [15] (LSCO), the chemical potential remains pinned roughly at 0.4eV above the top of the LHB, while for Nd 2−x Ce x CuO 4 (NDCO) [16] and Bi 2 Sr 2 Ca 1−x R x Cu 2 O 8+y (BSCO) [17,18,19,20], the chemical potential jumps upon doping and scales roughly as δ 2 as obtained here. Because stripes require ∆µ = 0, they have been invoked [21] to explain the origin of the mid-gap states in LSCO.…”

mentioning

confidence: 84%

Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap

Stãnescu

Phillips²

2003

Phys. Rev. Lett.

View full text Add to dashboard Cite

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature. The pseudogap arises because any singly-occupied site not immediately neighbouring a hole experiences a maximum energy barrier for transport equal to t 2 /U , where t is the nearest-neighbour hopping integral and U the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbour. The ubiquituity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.

show abstract

Doping dependence of the chemical potential in cuprate high-Tc superconductors I. La2−xSrxCuO4

Cited by 23 publications

References 55 publications

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties

A survey of the Van Hove scenario for high-tc superconductivity with special emphasis on pseudogaps and striped phases

Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap

Contact Info

Product

Resources

About

Doping dependence of the chemical potential in cuprate high-Tc superconductors I. La2−xSrxCuO4

Cited by 23 publications

References 55 publications

Epitaxially Induced Defects in Sr- and O-doped La2CuO4Thin Films Grown by MBE: Implications for Transport Properties

Epitaxially Induced Defects in Sr- and O-doped La2CuO4Thin Films Grown by MBE: Implications for Transport Properties

A survey of the Van Hove scenario for high-tc superconductivity with special emphasis on pseudogaps and striped phases

Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap

Contact Info

Product

Resources

About

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties

Epitaxially Induced Defects in Sr- and O-doped La₂CuO₄Thin Films Grown by MBE: Implications for Transport Properties