Doping Characteristics of N‐Doped p‐ZnSe and Cl‐Doped n‐ZnSe

Abstract

Doping characteristics of N-doped p-ZnSe and CI-doped n-ZnSe are extensively studied by Hall measurements, CV, PL, DLTS, ICTS, and ion-beam analysis. N forms both deep donors and acceptors in heavily N-doped ZnSe. The lattice location of the N atoms in heavily N-doped ZnSe is studied by ion beam channeling to get insight into the compensation mechanism. Free excitonic emission shifts to the lower energy side with N concentration, indicating a shrinkage of band gap. It is suggested that the carrier compensation mechanism in heavily C1-doped ZnSe is due to degradation of crystallinity. The maximum carrier concentration is greatly enhanced by selective doping of C1.