Doping and Irradiation Dependence of Electrical Conductivity of Fe<sup>3+</sup>and Ni<sup>2+</sup>Doped Polyvinyl Alcohol Films

Kumar, G. Vijaya; Chandramani, R.

doi:10.12693/aphyspola.117.917

Cited by 30 publications

(1 citation statement)

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“…In recent years, conjugated conducting polymers have become popular for optoelectronic applications. Several research reports have focused on modifying the optical and electrical properties of polymers by doping with transition metals, such as Zn, Co, Ni, Cu, and Fe [108][109][110]. Investigations and research are being carried on metal-doped polymer-based Schottky barrier diodes to develop low leakage and electrically superior diodes.…”

Section: Future Directionsmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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Section: Future Directionsmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures

et al. 2014

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The forward bias current conduction mechanisms of Au/PVC + TCNQ/p-Si structures have been investigated in a wide temperature range of 120-420 K for various applied bias voltage. The analysis of the main electrical parameters such as zero-bias barrier height (BH) ( Bo ), ideality factor (n), and interface states (N ss ) was found strongly dependent on temperature and voltage. The obtained results show that, while Bo increases, n decreases with increasing temperature. The plot of app versus q/2kT was drawn to show a Gaussian distribution (GD) of the BHs, and this plot shows two distinct linear regions. The Bo and standard deviation (σ s ) values were found from the slope and intercept of these plots for two regions as 1.16 eV and 0.161 V for the first region and 0.71 eV and 0.093 V for the second region, respectively. Such behavior is typical of a double GD (DGD) of the BHs due to the BH inhomogeneities at the metal-semiconductor interface. The slope and intercept of the modified (ln(I 0 /T 2 ) -q 2 σ 0 2 /2k 2 T 2 ) versus q/kT plot gives the and¯ Bo and effective Richardson constant (A*) as 1.16 and 0.76 eV and 36.7 and 83.8 A/cm 2 K 2 , respectively. The value of the A* (36.7 A/cm 2 K 2 ) is very close to the theoretical value of 32 A/cm 2 K 2 for p-Si. In addition, to interrupt the voltage-dependent activation energy, the ln(I s /T 2 ) versus q/kT plot was drawn in the voltage range of 0-0.3 V in 0.05 V steps. All of experimental results confirmed that the BH or E a values depend on the temperature as well as bias voltages. C

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UV crosslinking of Fe³⁺‐doped poly(vinyl alcohol)—Characterization of optical properties and swelling behavior

Rieß

Kern

2013

J of Applied Polymer Sci

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The effects of UV irradiation on iron(III)chloride doped poly(vinyl alcohol) (PVA) films, using a high molar mass polymer, have been studied. It has been found that the polymer is oxidized and crosslinked during UV irradiation. UV/VIS spectra reveal an exponential loss of absorption at λ = 360 nm, and the refractive index of the PVA:FeCl3 films decreases significantly during UV irradiation (ΔnD = −0.09). The effects of crosslinking have been studied using the sol–gel technique, which revealed high gel contents due to doping and UV‐exposure. Photolithographic patterning of doped PVA films using a medium‐pressure mercury‐vapor UV source has been carried out, leading to good contrast behavior before and after development in aqueous media. A photobleaching effect was observed, therefore the curing of thicker films is feasible. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2013

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Doping and Irradiation Dependence of Electrical Conductivity of Fe³⁺and Ni²⁺Doped Polyvinyl Alcohol Films

Cited by 30 publications

References 20 publications

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures

UV crosslinking of Fe³⁺‐doped poly(vinyl alcohol)—Characterization of optical properties and swelling behavior

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Doping and Irradiation Dependence of Electrical Conductivity of Fe3+and Ni2+Doped Polyvinyl Alcohol Films

Cited by 30 publications

References 20 publications

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures

UV crosslinking of Fe3+‐doped poly(vinyl alcohol)—Characterization of optical properties and swelling behavior

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Doping and Irradiation Dependence of Electrical Conductivity of Fe³⁺and Ni²⁺Doped Polyvinyl Alcohol Films

UV crosslinking of Fe³⁺‐doped poly(vinyl alcohol)—Characterization of optical properties and swelling behavior