Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

Fukata, Naoki; Chen, Jun; Sekiguchi, Takashi; Okada, Naoya; Murakami, Kouichi; Tsurui, Takao; Ito, Shun

doi:10.1063/1.2372698

Cited by 60 publications

(95 citation statements)

References 29 publications

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“…9,10 The results of our microRaman scattering measurements clearly showed the presence of boron ͑B͒ local vibrational peaks and Fano broadening of Si optical phonon peaks due to heavy B doping in SiNWs. 9 ESR measurements at 4.2 K showed the ESR signal of conduction electrons in phosphorus ͑P͒-doped SiNWs. 10 These results clearly proved that B and P atoms were doped in the crystalline Si core of SiNWs and were electrically activated in the sites.…”

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confidence: 97%

“…9,10 The study showed the states of dopant atoms in SiNWs such as bonding structures, sites, and electrical activities using micro-Raman scattering and electron spin resonance ͑ESR͒. 9,10 The results of our microRaman scattering measurements clearly showed the presence of boron ͑B͒ local vibrational peaks and Fano broadening of Si optical phonon peaks due to heavy B doping in SiNWs. 9 ESR measurements at 4.2 K showed the ESR signal of conduction electrons in phosphorus ͑P͒-doped SiNWs.…”

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confidence: 99%

“…In addition to the B local vibrational peak, the optical phonon peak for B-doped SiNWs and codoped SiNWs showed an asymmetric broadening to a higher wavenumber compared with that for undoped SiNWs and bulk Si. This broadening is due to the Fano effect, 9 showing that B atoms are electrically activated in the crystalline Si core of SiNWs. The dependences on the content of Ni 2 P in the target are shown in Fig.…”

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confidence: 99%

“…A peak at about 618 cm −1 is observed for B-doped SiNWs and codoped SiNWs. This peak has been assigned to the B local vibrational peak, 9 indicating B doping into the substitutional site of the crystalline Si core of SiNWs. In addition to the B local vibrational peak, the optical phonon peak for B-doped SiNWs and codoped SiNWs showed an asymmetric broadening to a higher wavenumber compared with that for undoped SiNWs and bulk Si.…”

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Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Fukata

Mitome

Bando

et al. 2008

Applied Physics Letters

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Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

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confidence: 97%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Fukata

Mitome

Bando

et al. 2008

Applied Physics Letters

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“…SiNWs can be prepared via various methods, such as thermal evaporation [7], laser ablation [8], molecular beam epitaxy [9], and chemical vapor deposition (CVD) [10]. Plasma-enhanced chemical vapor deposition (PECVD) is one of the most important methods of SiNW preparation because it significantly reduces the deposition temperature and increases the growth rate of SiNWs [11,12].…”

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Preparation and characterization of silicon nanowires catalyzed by aluminum

Al-Taay

Mahdi

Parlevliet

et al. 2013

Physica E: Low-dimensional Systems and Nanostructures

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractSilicon nanowires (SiNWs) were grown on indium tin oxide coated glass substrates by a pulsed plasma-enhanced chemical vapor deposition (PPECVD) method using aluminum as a catalyst. The thin films of the catalyst, with thicknesses ranging from 10 nm to 100 nm, were deposited on the substrates by thermal evaporation. The effect of the thickness of the thin film catalyst on the morphology of the silicon nanowires was investigated. The surface morphology study of the prepared wires showed that the modal wire diameter increased as the catalyst film thickness increased. The X-ray diffraction patterns of the prepared silicon nanowires had no silicon peaks, indicating that the wires had low crystallinity. The photoluminescence spectra of the SiNWs showed that all samples had more than one emission band. The emission band location and shape were found to be dependent on catalyst thickness. The Raman spectra of the prepared nanowires showed that the first order transverse band shifted toward lower frequencies compared with the c-Si band location.

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Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

et al. 2009

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This paper summarizes some of the essential aspects of silicon‐nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon‐wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon‐wire growth via the vapor–liquid–solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs–Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.

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Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

Cited by 60 publications

References 29 publications

Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Preparation and characterization of silicon nanowires catalyzed by aluminum

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

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