Doped indium nitride thin film by sol-gel spin coating method

Lee, Hui San; Ng, Sha Shiong; Yam, F.K.

doi:10.1063/1.5010452

Cited by 2 publications

(1 citation statement)

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“…Therefore, an alternative growth method which is simpler, safer, and cheaper is highly needed. Recently, we have successfully grown InN [18][19][20] and Mg-doped InN [21][22][23] using sol-gel spin coating technique. This approach allows the growth below the decomposition temperature of the InN (i.e., around 630 C).…”

Section: Introductionmentioning

confidence: 99%

Sol–Gel Spin Coating Growth of Magnesium-Doped Indium Nitride Thin Films on Different Substrates

Ng¹,

Lee²,

Lee³

2020

EngJ

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We report on the growth of p-type indium nitride (InN) thin films on different substrates using a relatively simple and cost-effective sol-gel spin coating method. The precursors for the indium source and p-type dopant were indium nitrate hydrate and magnesium chloride 6-hydrate powders, respectively. The structural, morphology, and optical properties of p-type InN thin films grown on different substrates were investigated. X-ray diffraction patterns revealed that the deposited Mg-doped InN thin film on GaN/AlN/Si(111) template show polycrystalline wurtzite structure with a strong InN(002) orientation and have a good crystallinity. Field emission scanning electron microscopy images and energy dispersive X-ray results showed that all the films exhibit densely packed surface morphology with hexagonal-like grains shape and low oxygen percentage with almost 1:1 ratio of indium to nitrogen. Moreover, two Raman-active modes of E2(High) and A1(LO) of the wurtzite InN were clearly observed for all samples. The ultraviolet-visiblenear infrared spectroscopy results showed that the energy bandgap of the Mg-doped InN thin films was in the range of 1.62-1.66 eV. From all the results, it can be concluded that the Mg doped InN film on GaN/AlN/Si(111) substrate has better crystalline quality as compared to that of other substrates.

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