Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

Giannazzo, Filippo; Calcagno, L.; Roccaforte, Fabrizio; Musumeci, Paolo; Via, F. La; Raineri, V.

doi:10.1016/s0169-4332(01)00500-1

Cited by 10 publications

(2 citation statements)

References 14 publications

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“…Various methods have been proposed for the cross-section dopant profiling of implanted SiC such Scanning Electron Microscopy (SEM) employing a through-the-lens (ExB) detector [2,3], Scanning Spreading Resistance Microscopy (SSRM) [4], Scanning Capacitance Microscopy (SCM) [5] or a combination of them [6].…”

Section: Introductionmentioning

confidence: 99%

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Tsagaraki

Nafouti

Peyre

et al. 2018

MSF

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Section: Introductionmentioning

confidence: 99%

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Tsagaraki

Nafouti

Peyre

et al. 2018

MSF

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“…Scanning probe microscopy (SPM) methodologies, such as scanning spreading resistance microscopy (SSRM) 12 and scanning capacitance microscopy (SCM), 13 which are sensitive to local charges and offer the needed resolution, have been exploited to study narrow bandgap semiconductors such as Si, SiGe, InP, GaAs, etc., where conventional adhesive Ag or Ga-In eutectic offer an acceptable low resistance back contact. 14 They have also been explored on wideband gap SiC [15][16][17][18][19][20] with fabricated back contacts. Early assessment of SSRM/ SCM techniques for (Al, Ga, In)N alloys done by Oliver et al suggests that the main challenges are the surface charging effects and high resistivity requiring application of a high DC and AC bias for a detectable SCM signal, casting doubt at the reliability and repeatability of such kind of measurements.…”

mentioning

confidence: 99%

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Minj

Zhao

Bakeroot

et al. 2021

Applied Physics Letters

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The current state of dopant assessment for the optimization of the III-nitride-based heterostructures for high frequency, high power, and light emission applications relies heavily on quantitative chemical analysis techniques. In such complex heterostructures, determination of p-type carrier density of the cap layer, control of background concentration, and assessment of polarization induced confined carriers are necessary for the realization of optimal devices. None of these can be completely inferred from chemical analysis owing to several material and growth issues including poor activation of Mg, presence of O impurities, and amphoteric nature of carbon impurities. Here, as regions of interest require nanometer resolution, especially near the interfaces featuring triangular quantum wells and exhibiting electron/hole confinement, exploitation of the behavior of the nanosize metal-semiconductor junction formed between the metallic scanning probe microscopy probe and the III-nitride surface is promising for carrier determination. By combining two techniques sensitive to local change in capacitance and rectifying characteristic of conduction at the nanoscale, the nature of free carriers originating from extrinsic n-type and p-type dopants and polarization induced confined carriers, two-dimensional electron gas and hole gas, were eventually revealed across III-nitride heterostructures.

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Application of Scanning Capacitance Microscopy to Analysis at the Nanoscale

Lányi

Nano Science and Technolgy

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Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

Cited by 10 publications

References 14 publications

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Application of Scanning Capacitance Microscopy to Analysis at the Nanoscale

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