2017
DOI: 10.1021/acs.nanolett.7b03553
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Dopant-Induced Plasmon Decay in Graphene

Abstract: Chemically doped graphene could support plasmon excitations up to telecommunication or even visible frequencies. Apart from that, the presence of dopant may influence electron scattering mechanisms in graphene and thus impact the plasmon decay rate. Here I study from first principles these effects in single-layer and bilayer graphene doped with various alkali and alkaline earth metals. I find new dopantactivated damping channels: loss due to out-of-plane graphene and in-plane dopant vibrations, and electron tr… Show more

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Cited by 45 publications
(69 citation statements)
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“…Despite the simplicity of the Einstein model, the trend of τ E and λ E is in good qualitative agreement with the result of first-principles calculations of Ref. 26.…”
Section: Approximate Treatment Of Electron-phonon Interactionsupporting
confidence: 85%
“…Despite the simplicity of the Einstein model, the trend of τ E and λ E is in good qualitative agreement with the result of first-principles calculations of Ref. 26.…”
Section: Approximate Treatment Of Electron-phonon Interactionsupporting
confidence: 85%
“…To reach this result, I adopted a diagrammatic analysis along with the Bethe-Salpeter equation for the phonon self-energy, an approach more commonly utilized for including the dynamical electron-phonon scattering mechanisms into an optical conductivity formula [43][44][45][46][47]. The above expression is equivalent to the intraband phonon self-energy derived in Refs.…”
mentioning
confidence: 99%
“…Furthermore, the low-energy absorption is decreased below the two times Fermi energy due to the Pauli blocking. For the 1.54% Li and 1.56% N concetrations the additional absorption peak appears below 0.5 eV that comes from the graphene-dopant interband transitions [63]. The temperature dependence is also slightly altered by presence of the dopant atom.…”
Section: Resultsmentioning
confidence: 95%