Dopant-free materials for carrier-selective passivating contact solar cells: A review

Acharyya, S. Chakraborty A.; Sadhukhan, Sourav; Panda, Tamalika; Ghosh, Dibyendu Kumar; Mandal, Nabin Chandra; Nandi, Anupam; Bose, Sukanta; Das, Gourab; Maity, Santanu; Chaudhuri, Phalguni; Saha, Hiranmay; Banerjee, Dipali

doi:10.1016/j.surfin.2021.101687

Cited by 17 publications

(12 citation statements)

References 241 publications

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“…Otherwise, the passivation would drastically deteriorate, which does not seems to be the case from the V oc values obtained [ 41 ]. Finally, is worth pointing out that although the measured V oc is lower than what is typically obtained in standard SHJ solar cells (>700 mV), this is in line with the results obtained for passivated TiO 2 contacts deposited by ALD [ 42 ].…”

Section: Resultssupporting

confidence: 88%

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

2022

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This work presents the implementation of ultrathin TiO2 films, deposited at room temperature by radio-frequency magnetron sputtering, as electron-selective contacts in silicon heterojunction solar cells. The effect of the working pressure on the properties of the TiO2 layers and its subsequent impact on the main parameters of the device are studied. The material characterization revealed an amorphous structure regardless of the working pressure; a rougher surface; and a blue shift in bandgap in the TiO2 layer deposited at the highest-pressure value of 0.89 Pa. When incorporated as part of the passivated full-area electron contact in silicon heterojunction solar cell, the chemical passivation provided by the intrinsic a-Si:H rapidly deteriorates upon the sputtering of the ultra-thin TiO2 films, although a short anneal is shown to restore much of the passivation lost. The deposition pressure and film thicknesses proved to be critical for the efficiency of the devices. The film thicknesses below 2 nm are necessary to reach open-circuit values above 660 mV, regardless of the deposition pressure. More so, the fill-factor showed a strong dependence on deposition pressure, with the best values obtained for the highest deposition pressure, which we correlated to the porosity of the films. Overall, these results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact deposited by magnetron sputtering. These results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact.

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Section: Resultssupporting

confidence: 88%

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

2022

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“…[ 16 ] These TMO/c‐Si heterojunctions induce the accumulation of holes or the depletion of electrons, achieving the highly selective transport of holes. [ 17 ] In 2014, Javey's group first used MoO 3− x as the hole‐selective contact layer of n‐type SHJ solar cell and obtained a conversion efficiency of 14.3%. [ 18 ] The highest efficiency of silicon solar cells based on MoO 3− x selective contact layer reached 23.83% very recently by suppressing the interfacial oxygen vacancy generation with plasma pretreatment of α‐Si:H layer.…”

Section: Introductionmentioning

confidence: 99%

Tunable Hole‐Selective Transport by Solution‐Processed MoO_3−x Via Doping for p‐Type Crystalline Silicon Solar Cells

Wei

Luo

et al. 2023

Solar RRL

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Molybdenum oxide (MoO3−x, x < 3) has been successfully used as an efficient hole‐selective contact material for crystalline silicon heterojunction solar cells. The carrier transport capability strongly depends on its work function, that is, oxygen vacancies; however, there are lack of effective methods to modulate the multiple oxidation states. Herein, the oxidation states of solution‐processed MoO3−x by doping Nb5+ to improve its hole‐selective contact performance with silicon are tuned. With the optimum doping concentration of 5%, both the reduced Mo5+ and oxygen vacancies increase, resulting in a decrease in the contact resistivity between the MoO3−x film and p‐type silicon from 161.1 to 62.9 mΩ·cm2 and an increase of the effective carrier lifetime from 165.4 to 391.0 μs simultaneously. Similarly, the doping of Ta5+ or V5+ in MoO3−x improves the passivated contact performance with silicon, while the former increases the concentration of oxygen vacancies and the latter reduces it. The solar cell with the structure of Ag/MoO3−x:Nb/p‐Si exhibits a conversion efficiency of 18.37%, which is the highest so far reported for the solution‐processed MoO3−x/silicon heterojunction. This work demonstrates a feasible strategy of tuning hole selectivity in MoO3−x by doping for high‐efficiency solar cells and other optoelectronic device applications.

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“…TEDs (zwitterionic tetrathiafulvalene-extended dicarboxylate radicals) have been noted as a highly stable conductive polymer alternative to PEDOT:PSS . Transition-metal oxides (TMOs) such as MoO x , V 2 O 5 , CrO 3 , and others of high stability are also used as alternative hole-selective layers. ,− …”

Section: Introductionmentioning

confidence: 99%

Spectral Downshifting and Passivation Effects Using 2D Perovskite (OAm)₂SnBr₄ Films to Enhance the Properties of Si Nanowire Solar Cells

Abdelbar

Zhang

Abdelhameed

et al. 2023

ACS Appl. Energy Mater.

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Si nanowires (Si NWs) are emerging as a promising candidate for photovoltaics due to their significant light-trapping characteristics. However, Si NWs have a high density of surface traps, which lead to carrier recombination; also, thermalization due to the absorption of high-energy photons causes the dissipation of input solar energy. In this study, Ag/Ti/n+/p-Si NWs/MoO x /Ag solar cells were formed based on Si NWs with MoO x as a hole transport layer. A highly luminescent 2D perovskite (C18H35NH3)2SnBr4 was applied to the front surface of the cell. This 2D perovskite with oleylamine (OAm) spacer passivates the surface of the Si NWs. In addition to the passivation effect, the 2D perovskite (OAm)2SnBr4 causes a downshifting and energy-transfer effect, which reduces the heat loss and raises the conversion efficiency. This effect has often been observed in semiconductor quantum dots and is also evident in 2D perovskite films, resulting in improved J sc, V oc, and fill factor and an increase in the overall cell efficiency to 18%.

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Dopant-free materials for carrier-selective passivating contact solar cells: A review

Cited by 17 publications

References 241 publications

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

Tunable Hole‐Selective Transport by Solution‐Processed MoO_3−x Via Doping for p‐Type Crystalline Silicon Solar Cells

Spectral Downshifting and Passivation Effects Using 2D Perovskite (OAm)₂SnBr₄ Films to Enhance the Properties of Si Nanowire Solar Cells

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Dopant-free materials for carrier-selective passivating contact solar cells: A review

Cited by 17 publications

References 241 publications

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

Tunable Hole‐Selective Transport by Solution‐Processed MoO3−x Via Doping for p‐Type Crystalline Silicon Solar Cells

Spectral Downshifting and Passivation Effects Using 2D Perovskite (OAm)2SnBr4 Films to Enhance the Properties of Si Nanowire Solar Cells

Contact Info

Product

Resources

About

Tunable Hole‐Selective Transport by Solution‐Processed MoO_3−x Via Doping for p‐Type Crystalline Silicon Solar Cells

Spectral Downshifting and Passivation Effects Using 2D Perovskite (OAm)₂SnBr₄ Films to Enhance the Properties of Si Nanowire Solar Cells