2020
DOI: 10.1063/5.0027434
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Donors and polaronic absorption in rutile TiO2 single crystals

Abstract: We have used a combination of optical absorption and electrical conductivity measurements to study the effect of the main donor on small polarons in rutile TiO 2 single crystals rendered n-type conductive by hydrogenation or doping with Nb. The electrical conductivity measured at 295 K for hydrogenated samples shows a clear correlation with the interstitial hydrogen (H i ) concentration, which is consistent with reports that H i is the main shallow donor in rutile TiO 2 . Conductive samples exhibit two distinc… Show more

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Cited by 7 publications
(5 citation statements)
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References 79 publications
(117 reference statements)
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“…Besides, H i can interact with acceptors and passivate them, increasing the net n-type conductivity. We have demonstrated previously 14 , 15 that annealing of single-crystalline TiO 2 wafers in N 2 at 1100–1200 °C or in forming gas (FG), 10%at. H 2 and 90%at.…”
Section: Resultsmentioning
confidence: 92%
“…Besides, H i can interact with acceptors and passivate them, increasing the net n-type conductivity. We have demonstrated previously 14 , 15 that annealing of single-crystalline TiO 2 wafers in N 2 at 1100–1200 °C or in forming gas (FG), 10%at. H 2 and 90%at.…”
Section: Resultsmentioning
confidence: 92%
“…The electrical conductivity of Nb-doped TiO 2 depends on both the level of Nb doping with the conductivity increasing approximately linearly with Nb content over the range 0.003–0.03 atom % Nb. 47 The electrical conductivity is also dependent on the number of oxygen vacancies. The Nb(V) substituting for Ti(IV) requires a charge balance which is met by oxygen deficiency.…”
Section: Resultsmentioning
confidence: 99%
“…Besides, Hi can interact with acceptors and passivate them, increasing the net n-type conductivity. We have demonstrated previously [13,14] that annealing of TiO2 in N2 at 1100-1200 o C or in forming gas (FG),…”
Section: Resultsmentioning
confidence: 99%