1978
DOI: 10.1143/jpsj.45.501
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Donor to Acceptor Electron Transfer in Germanium at Low Temperatures

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Cited by 11 publications
(2 citation statements)
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“…Dashed black bars indicate published cross section data, presumably at zero field. a. electron capture (T = 3.1K) on Sb + in Ge [16,17], b. electron capture (T = 1.5K) on neutral acceptors [18] 10 Predicted cross sections (due to acoustic phonon emission) for electrons on dipoles. The dipole cross section has a dependence on the dipole concentration.…”
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confidence: 99%
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“…Dashed black bars indicate published cross section data, presumably at zero field. a. electron capture (T = 3.1K) on Sb + in Ge [16,17], b. electron capture (T = 1.5K) on neutral acceptors [18] 10 Predicted cross sections (due to acoustic phonon emission) for electrons on dipoles. The dipole cross section has a dependence on the dipole concentration.…”
mentioning
confidence: 99%
“…Dashed black bars indicate published cross section data, presumably at zero field. a. hole capture (T = 1.6K) on B − in Ge [16], b. hole capture (T = 2.2K) on Al − in Ge [16], c. hole capture (T = 1.7K) by neutral donors [18] 2 The case for only diffusion and generation terms. a. electron and hole free carrier distributions in the steady state b. the potential energy terms due to the free carrier distributions c. the potential energy terms due to the space charge integrated onto bound bulk states .…”
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confidence: 99%