Donor-State-Enabling Er-Related Luminescence in Silicon: Direct Identification and Resonant Excitation

Izeddin, Ignacio; Klik, M.A.J.; Vinh, N. Q.; Bresler, M. S.; Gregorkiewicz, T.

doi:10.1103/physrevlett.99.077401

Cited by 29 publications

(23 citation statements)

References 19 publications

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“…33 It should be mentioned, that recently, it has been postulated, as well, the possible existence of deep trap states related with presence of Er 3þ ions in the bulk silicon. 25 An alternative explanation to our experimental observations would be that we have two different types of sensitizers present in our samples. As the absorption cross-section of the silicon nanoclusters is decreasing with wavelength, the effective cross-section of Er 3þ ions sensitization through the Si-nc may reach a lower value, where the contribution from another sensitizer type could become significant.…”

Section: -3mentioning

confidence: 81%

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Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Prtljaga

Navarro-Urriós²,

Pitanti³

et al. 2012

Journal of Applied Physics

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Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon J. Appl. Phys. 111, 094910 (2012) Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantumwell structure Appl. Phys. Lett. 100, 141905 (2012) Capability of photoluminescence for characterization of multi-crystalline silicon J. Appl. Phys. 111, 073504 (2012) Investigation of defect states in heavily dislocated thin silicon films J. Appl. Phys. 111, 053706 (2012) Additional information on J. Appl. Phys. The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state ( 4 I 13/2 ) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state ( 4 I 13/2 ) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm-680 nm). V C 2012 American Institute of Physics.

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Section: -3mentioning

confidence: 81%

“…2) the emission dynamics (exciton populations) we observe are practically the same. As it is rather unlikely that non-radiative recombination due to Er 3þ related defect states show such a strong dependence on excitation wavelength in this range of energies, 23,25 we attribute this distinct behavior to a change in the energy transfer process.…”

mentioning

confidence: 96%

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Prtljaga

Navarro-Urriós²,

Pitanti³

et al. 2012

Journal of Applied Physics

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“…In this case, RE ions are excited by nonradiative recombination of excitons efficiently generated due to band-to-band absorption. [7][8][9][10][11] However, extensive investigations, conducted especially for the highly desired semiconductor-RE system Si:Er, [12][13][14][15] identified a very efficient excitation reversal and, in spite of an enormous research effort, 16 stable bright emission at room temperature could not be achieved.…”

Section: Introductionmentioning

confidence: 99%

Step-like increase of quantum yield of 1.5 μm Er-related emission in SiO2 doped with Si nanocrystals

Saeed

Jong

Gregorkiewicz

2015

Journal of Applied Physics

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We investigate the excitation dependence of the efficiency of the Si nanocrystals-mediated photoluminescence from Er3+ ions embedded in a SiO2 matrix. We show that the quantum yield of this emission increases in a step-like manner with excitation energy. The subsequent thresholds of this characteristic dependence are approximately given by the sum of the Si nanocrystals bandgap energy and multiples of 0.8 eV, corresponding to the energy of the first excited state of Er3+ ions. By comparing differently prepared materials, we explicitly demonstrate that the actual values of the threshold energies and the rate of the observed increase of the external quantum yield depend on sample characteristics—the size, the optical activity and the concentration of Si nanocrystals as well Er3+ ions to Si nanocrystals concentration ratio. In that way, detailed insights into the efficient excitation of Er3+ ions are obtained. In particular, the essential role of the hot-carrier-mediated Er excitation route is established, with a possible application perspective for highly efficient future-generation photovoltaics.

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“…It then becomes very important to understand the dynamics between higher excited states. Doping with Er is possibly the most widely investigated way for improving photonic properties of crystalline silicon Two colour FIRMPL spectroscopy has enabled much greater understanding of the luminescence process [53,54,55,56].…”

Section: G Impurities In Semiconductorsmentioning

confidence: 99%

Far-infrared free-electron lasers and their applications

Murdin

2009

Contemporary Physics

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Free electron lasers based on radio-frequency linear accelerators provide an important source of farinfrared radiation which allow exciting experiments that cannot be performed in any other way. Facilities such as FELIX (Nieuwegein, The Netherlands), JFEL (Newport News VA, USA), FELBE (Dresden, Germany), CLIO (Paris, France) and others provide mid-and far-infrared output in picoseconds pulses with micro-joules of energy. They give continuous, wide tuning in far-IR for resonant pumping of discrete transitions (with simultaneous coverage of mid-IR) from around 3 to 250 µm wavelength. This enables time-resolved spectroscopy, non-linear optics and spectroscopy of weak absorptions. They have been applied to a wide variety of problems in condensed matter physics, physical chemistry and biophysics. We review the physics applications of these sources. Far-infrared Free-Electron Lasers and their output characteristicsThe technology of 4 th generation light sources, or free-electron lasers (FELs), pumped by radiofrequency linear accelerators (r.f. linacs) is mature enough to have enabled well established user facilities that provide thousands of hours of beam-time per year. The typical engineering constraints put the wavelength of these sources in the mid-to far-infrared wavelength, or THz frequency, range of the spectrum. This wavelength range is relatively poorly covered by other source types, and the combination of output characteristics is unique, and allows a range of experiment types that cannot be performed by other means. The output may give (as exemplified by the FELIX laser in Nieuwegein, the Netherlands):o Continuous and easy tuning over a wide range of wavelengths in a matter of seconds without beam steering o high pulse power for non-linear optics in the megawatt range; o short pulses for picosecond dynamics (of order 10-1000 optical cycles); o controllable repetition rate of the micropulse (from single pulses up to order 1 GHz); o coherent (band-width limited) pulses of controllable length/bandwidth (width typically from 1-10%). We explain briefly (and highly schematically) the operating principles of the r.f. linac pumped FEL, in order to explain how these characteristics come about, and how they are controlled. For a recent review of the physics and output characteristics see [1].In the FEL a relativistic beam of electrons produced by the accelerator is injected into an optical cavity, containing an undulator. The undulator is a periodic magnetic field perpendicular to the direction of the electron beam of alternating polarity, that causes a periodic deflection of the electrons as shown in Fig 1. The transverse motion in the inertial frame travelling down the undulator with the longitudinal speed of the electron bunch is analogous to the oscillatory motion of electrons in a stationary dipole antenna and hence results in the emission of radiation with a frequency equal to the oscillation frequency. In this inertial frame the undulator period is length contracted, and the emitted radiation when view...

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Donor-State-Enabling Er-Related Luminescence in Silicon: Direct Identification and Resonant Excitation

Cited by 29 publications

References 19 publications

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Step-like increase of quantum yield of 1.5 μm Er-related emission in SiO2 doped with Si nanocrystals

Far-infrared free-electron lasers and their applications

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