Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall effect under pressure

The superposition principle is one of the cornerstones of physics. In low-dimensional systems, it is routinely used to model the potential profile. That is the case of coupled [Formula: see text]-doped quantum wells, for which, several works have studied the transport and optoelectronic properties. However, the Poisson equation determines the potential profile is not linear, and the superposition principle is not at all valid. The aim of this work is to correct some of the inconsistencies of the mentioned models for coupled [Formula: see text]-doped quantum wells. In the framework of Thomas–Fermi approximation, we calculated the potential profile, the wave functions, the energy values and the relative absorption coefficient for the double system compared to an isolated delta system in terms of impurity density and distance between [Formula: see text]-wells. We found a red shifting in the absorption coefficient when the interlayer distances increase, in addition, an enhancement in the absorption coefficient is detected for a specific separation distance. Our results agree with ab-initio calculations reported for the electronic structure.

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Optical absorption coefficient in n-type double δ-doped layers GaAs quantum wells

Noverola-Gamas

Gaggero‐Sager

Oubram

2019

Int. J. Mod. Phys. B

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Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall effect under pressure

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Optical absorption coefficient in n-type double δ-doped layers GaAs quantum wells

Optical absorption coefficient in n-type double δ-doped layers GaAs quantum wells

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