Donor bound excitons confined in a quantum dot

Revathi, M.; Peter, A. John

doi:10.1016/j.ssc.2010.02.014

Cited by 20 publications

(4 citation statements)

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“…This is due to the increase of the effect confinement potential of the conduction electron, first term in equation (31), and the small change of the Zeeman term, when x changes from x = 0.12 to 0.24. In GaN, InAs-GaAs, GaAs-AlGaAS QDs and quantum wells (QWs) system, for example in QWs with L = 30 Å and with the applied magnetic field in the range 0-12 T, the difference between the energies corresponding to the spin-up and spin-down states is notably lower (∼0.2 meV for H = 12 T) [37][38][39][40], which for typical QW systems and typical carrier densities is relatively small and can generally be neglected. The same calculation was performed for R = 10 nm, as is shown in figure 6.…”

Section: Resultsmentioning

confidence: 99%

Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Sánchez-Cano¹,

Porras‐Montenegro²

2011

Semicond. Sci. Technol.

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Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga 1−x In x As y Sb 1−y -GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga 1−x In x As y Sb 1−y -GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k • p mixing between the conduction band c 6 and the valence bands v 8 and v 7 states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga 1−x In x As y Sb 1−y -GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.

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Section: Resultsmentioning

confidence: 99%

Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Sánchez-Cano¹,

Porras‐Montenegro²

2011

Semicond. Sci. Technol.

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“…where E 0 is the ground state energy in absence of anharmonicity and E is the same in presence of anharmonicity. Following the works of Xia et al [61,62] and Revathi et al, [63] we can define IEE (E ph ) as…”

Section: Binding Energy and Interband Emission Energymentioning

confidence: 99%

Influence of Noise–Anharmonicity Interplay on a Few Physical Properties of Quantum Dots

Arif

Roy²,

Ghosh

2021

Physica Status Solidi (b)

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Herein, a meticulous inspection of the tuning of a few important physical properties of quantum dots (QDs), arising out of the subtle interplay between Gaussian white noise (GWN) and anharmonicity, is performed. The physical properties considered are dipole moment, polarizability, Stark shift, magnetic susceptibility, binding energy, interband emission energy, and time-average excitation rate. The pathway of the introduction of noise (additive/multiplicative) to the QD system, coupled with the symmetry (odd/even) of the anharmonic potential present in the system produces delicate and diverse features in the aforementioned physical properties. These physical attributes consist of monotonic growth, monotonic decline, maximization, minimization, and saturation in these physical properties modulated by different extents of the interplay between the noise mode and the symmetry of the anharmonicity. The study holds relevance in view of potential technological applications of QDs under the simultaneous influence of anharmonic potential and noise.

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“…The valence band anisotropy is described in by assuming different hole masses in different directions. As the heavy hole excitons are more common in the experimental results [26], numerical calculations have been carried out to investigate the exciton states in the ZB InGaN QD with the heavy hole mass. And the heavy hole effective mass in in-plane and z-direction are given as follows [27,28] …”

Section: Theoretical Modelmentioning

confidence: 99%

Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot

Xia

Zeng

Wei

2011

Journal of Luminescence

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Donor bound excitons confined in a quantum dot

Cited by 20 publications

References 16 publications

Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Influence of Noise–Anharmonicity Interplay on a Few Physical Properties of Quantum Dots

Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot

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Donor bound excitons confined in a quantum dot

Cited by 20 publications

References 16 publications

Electrong-factor study in Ga1 −xInxAsySb1 −y–GaSb and GaSb–Ga1 −xInxAsySb1 −y–GaSb quaternary alloy semiconductor spherical quantum dots

Electrong-factor study in Ga1 −xInxAsySb1 −y–GaSb and GaSb–Ga1 −xInxAsySb1 −y–GaSb quaternary alloy semiconductor spherical quantum dots

Influence of Noise–Anharmonicity Interplay on a Few Physical Properties of Quantum Dots

Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot

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Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots