Donor—acceptor pairs in semiconductors

Williams, Ferd

doi:10.1002/pssb.19680250202

Cited by 230 publications

(51 citation statements)

References 51 publications

(48 reference statements)

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“…In elemental semiconductors both type I and type II DA pairs occur and lead to the simultaneous observation of both series of pair spectra [33,34]. Our present DAP spectra (Fig.…”

Section: Near-band-edge Luminescence Studies Of Diamond Doped During mentioning

confidence: 88%

“…with m the shell number, b 0 for type I donor±acceptor pairs (donors and acceptors are located on the same sublattice), and b 5a8 for type II donor±acceptor pairs (donors and acceptors are on different sublattices) [32,34]. In elemental semiconductors both type I and type II DA pairs occur and lead to the simultaneous observation of both series of pair spectra [33,34].…”

Section: Near-band-edge Luminescence Studies Of Diamond Doped During mentioning

confidence: 96%

“…where R AD is the DA interspacing and JR AD is the so-called Coulomb integral describing the interaction between the electron and the acceptor, the hole and the donor, and the electron±hole interaction [34]. This term is only important for very small values of R AD .…”

Section: Near-band-edge Luminescence Studies Of Diamond Doped During mentioning

confidence: 98%

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Near-Band-Edge Luminescence Studies of Diamond Doped during CVD Growth or by Ion Implantation

Sternschulte

Thonke

Sauer

1999

phys. stat. sol. (a)

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Near‐band‐edge cathodoluminescence of doped diamonds was studied at low temperatures. The doped diamonds were prepared either during the CVD growth of the diamond films by adding boron, phosphorus, or lithium sources to the reaction gases, or alternatively by ion implantation of boron, phosphorus, sodium, or arsenic. Observation of the boron bound exciton after boron implantation and annealing above 1200 °C is taken as evidence that this acceptor species was successfully incorporated on substitutional lattice sites. Similarly, doping by phosphorus either during growth or by ion implantation and subsequent annealing leads to the emission of a bound exciton transition at 5.175 eV. Assuming Haynes' rule to be valid we estimate a donor ionization energy of nearly 640 meV for the phosphorus‐related impurity. Discrete donor–acceptor pair transitions are observed in the near‐band‐edge region in diamonds which contain both phosphorus and boron in low concentrations. The analysis of the spectra yields 630 meV activation energy of the phosphorus‐related donor consistent with the estimate from the bound exciton spectra.

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“…In elemental semiconductors both type I and type II DA pairs occur and lead to the simultaneous observation of both series of pair spectra [33,34]. Our present DAP spectra (Fig.…”

Section: Near-band-edge Luminescence Studies Of Diamond Doped During mentioning

confidence: 88%

Section: Near-band-edge Luminescence Studies Of Diamond Doped During mentioning

confidence: 96%

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Near-Band-Edge Luminescence Studies of Diamond Doped during CVD Growth or by Ion Implantation

Sternschulte

Thonke

Sauer

1999

phys. stat. sol. (a)

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“…Thus, the evaluations of critical concentrations using Eqs. (26) and (27) for lightly compensated ( 005) K = .…”

Section: E D E T D Tmentioning

confidence: 99%

“…U < The pure Coulomb interaction of an ion pair born in every act of donor-acceptor radiative recombination in crystalline semiconductors manifests itself similarly (see, e.g., Ref. [26]). It is clear that Eq.…”

Section: Introductionmentioning

confidence: 96%

A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

Poklonski

Вырко

Poklonskaya

et al. 2008

Physica Status Solidi (b)

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The screening of an impurity ion in diamond by both the holes hopping via boron atoms in charge states (0) and (–1) and the holes of the valence band is calculated in the Debye–Hückel approximation. It is shown that a decrease of the ionized boron atom affinity to valence band hole is determined by its screening. An expression for the dependence of differential thermal ionization energy E1 of boron atoms on their concentration N is obtained in the quasiclassical approximation. Calculated dependence of valence band hole concentration p on N agrees with known experimental data, when the contribution of hopping conductivity to Hall effect may be neglected. A probability density function of the impurity ions and the valence band holes distribution over the crystal is assumed to be Poisson‐like, while their electrostatic potential energy distribution is taken to be normal. The calculations of E1(N) and the critical concentrations of boron atoms N = NM for the insulator–metal phase transition (Mott transition) at different compensation ratios are compared with experimental data. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Donor—acceptor pairs in semiconductors

Cited by 230 publications

References 51 publications

Near-Band-Edge Luminescence Studies of Diamond Doped during CVD Growth or by Ion Implantation

Near-Band-Edge Luminescence Studies of Diamond Doped during CVD Growth or by Ion Implantation

A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

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