Donor-acceptor pair luminescence involving the iodine <i>A</i> center in CdTe

Lee, Jaesun; Giles, N. C.; Rajavel, D.; Summers, Christopher J.

doi:10.1063/1.359623

Cited by 38 publications

(22 citation statements)

References 19 publications

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“…Although, in the high-temperature range of a measurement, a well defined value for E T is obtained, there may still be some ambiquity in the low-temperature region. To manage this situation, a ''better'' fitting function has been introduced, with two different activation energies, of which E T1 is dominant for the low-temperature region ͑TϷ5 -60 K͒ and E T2 for the hightemperature region ͑TϾ60 K͒: [3][4][5] I͑T͒ϭ I 0 1ϩ␣ 1 exp͑ϪE T1 /kT͒ϩ␣ 2 exp͑ϪE T2 /kT͒ .…”

Section: Discussionmentioning

confidence: 99%

Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?

Krustok

Collan

Hjelt

1997

Journal of Applied Physics

198

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Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice J. Appl. Phys. 112, 063512 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.Several experimental photoluminescence ͑PL͒ bands of different energies for variously prepared CdTe samples are compared. Temperature variation of the PL intensity is modeled with two nonradiative thermal activation energies, of which E T1 is dominant for about Tр60 K, and E T2 for the upper temperature range of the measurement. The size of E T1 is invariably of the order of a few meV and, although of unclear origin, its magnitude is usually interpreted as an electronic energy level difference over which the carriers escape by thermal excitation. In CdTe the existence of such a small energy level difference E T1 is not easy to explain. On the contrary, we find clear evidence that, at low temperature, the PL intensity reduction with increasing temperature in fact results from the approximately T Ϫ2 temperature dependent capture cross sections of the carriers at the recombination centers, and not from a genuine thermal activation energy E T1 .

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Section: Discussionmentioning

confidence: 99%

Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?

Krustok

Collan

Hjelt

1997

Journal of Applied Physics

198

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“…The sharp peak at 7814 A (1.5863 eV) is attributed to a neutral donor bound exciton line (D 0 , X) with iodine as donor, and the week broad shoulder at 7889 A (1.5712 eV) as due to the acceptor bound exciton (A 0 , X) line [7]. The broad and most intense peak at 8688 A (1.4267 eV), whose intensity increases with the doping level, is due to the donor-acceptor pair recombination involving the shallow iodine donor I Te and the V Cd -I Te acceptor [8].…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature Growth and Doping of CdTe Epilayers on CdTe Substrates in a Remote-Plasma-Assisted MOCVD System for Nuclear Radiation Detector Applications

Niraula

Nakamura

Aoki

et al. 2002

phys. stat. sol. (b)

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Homoepitaxial growth and n-type impurity doping of CdTe layers at low substrate temperatures were carried out for their applications in nuclear radiation detector fabrication. The grown epilayers were characterized by scanning electron microscopy, photoluminescence and Hall measurements. Highly conductive iodine doped layers could be obtained at a substrate temperature of 150 C, and these layers were found to be more suitable for radiation detector applications than other layers grown at higher substrate temperatures. The surface morphology of these homoepilayers was not very smooth, however, distinct edge emission and deep level emission bands were observed on the PL spectra at 20 K. A diode-type radiation detector fabricated using this low temperature growth and doping technique, exhibited very good rectification property with a very low value of reverse bias leakage current and an excellent nuclear radiation detection property.Introduction CdTe is a technologically important semiconductor with its applications in nuclear radiation detectors, infrared detectors, solar cells, and other optoelectronic devices, and has long been investigated [1,2]. Many device applications require low temperature growth and efficient substitutional doping with donor and/or acceptor. Particularly in the nuclear radiation detector fabrication, low device leakage current is an essential factor because it allows one to apply high electric field on the detector which, in turn, improves the charge transport properties and hence the detector performance. However, the maximum resistivity of the detector grade crystal available today is in the order of 10 9 Wcm and it suffers from excessive leakage current when a high electric field is applied on the detector. Fabricating a rectifying junction on the crystal wafer by growing an epitaxial layer on the crystal helps to suppress the leakage current significantly. However, the lack of a low temperature growth and doping technique has limited this approach because there is a possibility of initial crystal degradation at high temperature growth as the CdTe crystals are vulnerable to high temperature processing [3].We have used a remote-plasma-assisted MOCVD system for the epitaxial growth and doping of CdTe at low substrate temperature. This system has been assisted with atomic-hydrogen radicals produced in a remote plasma zone. These plasma radicals help to enhance the decomposition of source monomers and result an epitaxial growth even at low substrate temperatures. Properties of the grown epilayers doped with iodine for ntype impurity will be presented. Furthermore, performance of a diode-type nuclear ra-

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“…Based on the intensity distribution of the phonon replicas, this band was identified as a donor-acceptor pair (DAP) recombination involving an iodine donor and the iodine A-center (V Cd -I Te ) acceptor. 12,13 The DAP band becomes dominant due to the increased dopant incorporation in the crystal. However, they are in compensated states, which increase the crystal resistivity.…”

Section: Growth Of P-cdte Layersmentioning

confidence: 99%

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

Yasuda

Niraula

Oka

et al. 2010

Journal of Elec Materi

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Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductive n-type layers or highly resistive p-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, were p-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25 were n-type. A maximum free electron concentration of 1.3 9 10 17 cm À3 was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.

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Donor-acceptor pair luminescence involving the iodine A center in CdTe

Cited by 38 publications

References 19 publications

Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?

Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?

Low-Temperature Growth and Doping of CdTe Epilayers on CdTe Substrates in a Remote-Plasma-Assisted MOCVD System for Nuclear Radiation Detector Applications

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

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