Dominant radicals in electron cyclotron resonance plasma CVD

Abstract

The dominant SiH x radicals for growth of a-Si:H films in electron cyclotron resonance plasma chemical vapour deposition have been investigated by analysing the film coverage on a trench. The profile of the film prepared from radicals produced in the gas phase was simulated by a Monte Carlo method using a sticking probability of 0.8 for Si, SiH and SiH 2 radicals and of 0.2 for SiH 3 radicals. A comparison between the experimental result and the simulation showed that the dominant radicals contributing to film growth are SiH x (x = 0-2). High-rate deposition of high-quality films in ECR plasma CVD demonstrates that the nature of the precursor species does not universally determine the film quality. Energetic particle bombardment permits high-quality films to be deposited despite the high reactivities of the precursor species.

Effect of SiMg alloy on inclusions and microstructures of 16Mn steel

“…4c. Owing to abundant large angle grain boundaries and a fine interlocking structure of the lath ferrites, other studies [18][19][20] have indicated that IGF could markedly refine the grains. As a result, the growth and propagation of cleavage microcracks are needed to consume more energy.…”