Dominant photogenerated valley current in a double-barrier resonant-tunneling diode

Abstract

Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.

Effects of Pressure on GaAs/InxGa1-xAs/AlAs Resonant Tunneling Structures

“…Oscillations of up to 712 GHz have been reported and several applications of RTD for multivalued logic have been proposed; (4)(5)(6) the latter focused on the utilization of the unique electronic and optic properties of these devices for lasers, detectors and modulators in the infrared-to-visible wavelength range, (7,8) and high-speed optically switched electronic devices. (9,10) Pressure or stress plays a very important role in the investigation of the transport properties of semiconductor materials and offers a possibility of designing heterostructure devices with customized performances. (11,12) All III-V compounds are piezoelectric owing to the polar character of the bonds between their different atoms.…”

Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode

“…Over the last decade resonant tunnelling diodes (RTDs) based on double-barrier heterostructures have attracted elevated attention due to their electronic and photonic applications. The latter were concentrated on utilization of the unique electronic and optic properties of these devices for lasers, detectors and modulators in the infrared to visible wavelength range [1,2], and high-speed optically switched electronic devices [3,4]. At the same time investigation of such devices under illumination could be successfully used for the understanding and analysis of basic electronic processes occurring in vertical transport devices.…”