2010
DOI: 10.1007/978-1-4419-1417-0
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Domains in Ferroic Crystals and Thin Films

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Cited by 572 publications
(558 citation statements)
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“…It is worth noticing that for this composition a film thickness higher than 6 nm is required to develop enough strain and induce domain formation. The measured domain period as a function of film thickness is consistent with Roytburd's square root law for ferroelastic domains 40,41 , as also observed in 90°a-a domains in BaTiO 3 lamellae 12 . For fitting the experimental data to Roytburd's model, we use the lattice parameters of the film and the substrate (and thus the strain values) at room temperature, as the domain freezing temperature is not known at this point.…”
Section: Resultssupporting
confidence: 84%
“…It is worth noticing that for this composition a film thickness higher than 6 nm is required to develop enough strain and induce domain formation. The measured domain period as a function of film thickness is consistent with Roytburd's square root law for ferroelastic domains 40,41 , as also observed in 90°a-a domains in BaTiO 3 lamellae 12 . For fitting the experimental data to Roytburd's model, we use the lattice parameters of the film and the substrate (and thus the strain values) at room temperature, as the domain freezing temperature is not known at this point.…”
Section: Resultssupporting
confidence: 84%
“…In uniaxial ferroelectrics, 180 domain walls typically separate antiparallel domains with polarization vector parallel to domain plane, so as to avoid high electrostatic energy associated with polarization discontinuity at the domain wall. 19 Consequently, charged domain walls have been rarely observed in ferroelectric materials, e.g., in PbTiO 3 crystals, 20 in PZT thin films 21 and, recently, in uniaxial organic ferroelectrics. 18 An as-grown glycine crystal has both antiparallel (neutral) and charged ferroelectric domain walls appearing as a series of steps as shown schematically in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The existence of such boundaries involves large polarization discontinuity with the bound charge compensated either by conductivity, or (partly) by zig-zag domain wall geometry. 50 In contrast, a 180 domain boundary (DB2) often appears separating domains with antiparallel polarization directions (Fig. 4(b)).…”
Section: Resultsmentioning
confidence: 99%