Domain wall pinning through nanoscale interfacial Dzyaloshinskii–Moriya interaction

Kumar, Dheeraj; Chan, JianPeng; Piramanayagam, S. N.

doi:10.1063/5.0070773

Cited by 8 publications

(7 citation statements)

References 63 publications

(74 reference statements)

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“…Subsequently, our group studied the concept of altering the magnetic properties locally to pin the DWs . This was done using the concepts of ( i ) local nonmagnetic metal diffusion at specific positions of a FM wire, ( ii ) implantation of nonmagnetic ions in an FM wire, ( iii ) local change of spin configuration by utilizing the exchange coupling between IP and OOP magnetized (DW device) wire, and ( iv ) introducing i DMI locally at specific centers to pin the DWs. , …”

Section: Resultsmentioning

confidence: 99%

“…38 This was done using the concepts of (i) local nonmagnetic metal diffusion at specific positions of a FM wire, 93 (ii) implantation of nonmagnetic ions in an FM wire, 94 (iii) local change of spin configuration by utilizing the exchange coupling between IP and OOP magnetized (DW device) wire, and (iv) introducing iDMI locally at specific centers to pin the DWs. 95,96 From the point of view of commercial implementation of NC, geometric pinning appears to be practical. This is because the synapse can be patterned in one lithography step.…”

Section: Resultsmentioning

confidence: 99%

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Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

et al. 2023

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Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve lowpower intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices, such as memristors and spintronic devices. In comparison, spintronics-based neurons and synapses have potentially higher endurance. However, for realizing low-power devices, domain wall (DW) devices that show DW motion at low energies�typically below pJ/bit�are favored. Here, we demonstrate DW motion at current densities as low as 10 6 A/m 2 by engineering the β-W spin−orbit coupling (SOC) material. With our design, we achieve ultralow pinning fields and current density reduction by a factor of 10 4 . The energy required to move the DW by a distance of about 18.6 μm is 0.4 fJ, which translates into the energy consumption of 27 aJ/bit for a bit-length of 1 μm. With a meander DW device configuration, we have established a controlled DW motion for synapse applications and have shown the direction to make ultralow energy spin-based neuromorphic elements.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

et al. 2023

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“…To achieve controlled, reliable, and reproducible DW motion, researchers studied different mechanisms to pin the DWs at desired positions. These are termed as artificial pinning sites and can be of geometrical (shape) or nongeometrical (magnetic properties) origin. ,− Several such pinning sites could be used to achieve intermediate magnetization (multiple resistance) states in DW-MTJ devices. In earlier days of DW device research, artificial pinning sites in the shape of triangular notches were introduced to demonstrate DW pinning.…”

Section: Introductionmentioning

confidence: 99%

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Rahaman

Kumar

Chung

et al. 2023

ACS Appl. Mater. Interfaces

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Neuromorphic computing (NC) is considered a potential vehicle for implementing energy-efficient artificial intelligence. To realize NC, several technologies are being investigated. Among them, the spin–orbit torque (SOT)-driven domain wall (DW) devices are one of the potential candidates. Researchers have proposed different device designs to achieve neurons and synapses, the building blocks of NC. However, the experimental realization of DW device-based NC is only at the primeval stage. Here, we have studied pine-tree DW devices, based on the Laplace pressure on the elastic DWs, for achieving synaptic functionalities and diode-like characteristics. We demonstrate an asymmetric pinning strength for DW motion in two opposite directions to show the potential of these devices as DW diodes. We have used micromagnetic simulations to understand the experimental findings and to estimate the Laplace pressure for various design parameters. The study provides a strategy to fabricate a multifunctional DW device, exhibiting synaptic properties and diode characteristics.

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“…Kumar et al demonstrated multiple resistance states by modifying interfacial Dzyaloshinskii–Moriya interaction ( i DMI) locally via micromagnetic simulations. [ 48 ] In another approach, the pinning can be achieved via geometric modulation. [ 43 ] Siddiqui et al demonstrated multiple resistance states in the MTJ device by linearly varying the width of HM.…”

Section: Spintronic Devices For Neuromorphic Applicationsmentioning

confidence: 99%

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Maddu

Kumar

Bhatti

et al. 2023

Physica Rapid Research Ltrs

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With the advent of the Big Data era, neuromorphic computing (NC) (also known as brain‐inspired computing) has gained a lot of research interest. Spintronic devices are the emerging candidates for implementing the NC due to their intrinsic nonvolatility, extremely high endurance, low‐power consumption, and complementary metal‐oxide compatibility. Many research groups have proposed various NC architectures based on spintronic devices. Herein, a collective survey of different spintronic‐based approaches is given for NC. The reviewed approaches include the progress of stochastic magnetic tunnel junction (MTJ) devices, spin‐torque nano‐oscillator, spin‐Hall nano‐oscillator, domain walls, and skyrmion devices. In all of these approaches, spin–orbit torque (SOT)‐based magnetization control, which is achieved via spintronics heterostructures, plays a significant role. Various heterostructures of heavy metal and ferromagnetic layers that have been proposed are reviewed for generating SOT. In addition, the phenomena and materials involved in the generation of orbital torque are summarized due to the orbital Hall effect (OHE), which has recently gained researchers’ attention. Finally, an outlook on the opportunities and challenges for spintronic‐based NC hardware is provided, shedding light on its great potential for artificial intelligence (AI) applications.

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Domain wall pinning through nanoscale interfacial Dzyaloshinskii–Moriya interaction

Cited by 8 publications

References 63 publications

Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

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