Domain wall orientation and domain shape in KTiOPO4 crystals

Shur, V. Ya.; Vaskina, E. M.; Пелегова, Е. В.; Chuvakova, M. A.; Ахматханов, А. Р.; Kizko, O. V.; Ivanov, Maxim; Kholkin, A. L.

doi:10.1063/1.4963781

Cited by 10 publications

(2 citation statements)

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“…Such type of current shape was previously reported and analyzed [31]. According to the in situ domain kinetics observation the current peaks corresponded to the domain wall jumps after merging events [31,32] (Figure 2). The higher threshold fields obtained in the present paper as compared to [31] can be attributed to slight difference of the crystal composition [5].…”

Section: Polarization Reversal Without Artificial Dielectric Layersupporting

confidence: 78%

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

et al. 2018

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Studies of polarization reversal processes in potassium titanyl phosphate (KTiOPO 4 , KTP) single crystals with surface dielectric layer are important due to their potential applications as the basis of bottom-up technology for creation of periodically poled nonlinear-optical crystals. We present the results of switching currents analysis accompanied by in situ visualization of domain kinetics during polarization reversal in KTP with 3 m-thick photoresist dielectric layer. Qualitative change of the switching current shape has been revealed as compared to the polarization reversal without surface dielectric layer. Two stages of domain structure evolution have been distinguished by in situ visualization of domain kinetics. The formation of submicron domain streamers in front of the moving domain walls has been revealed. The broadening of the domain streamers (1D domain growth) was observed at the second stage. The switching currents were approximated by the modified Kolmogorov-Avrami formula taking into account the change of the growth dimensionality ("geometrical catastrophe"). The sufficient input of the 1D growth to the switching process decreased with increase of the switching field. The obtained results were attributed to the domain wall shape instability induced by retardation of the depolarization field screening in ferroelectric with surface dielectric layer.

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Section: Polarization Reversal Without Artificial Dielectric Layersupporting

confidence: 78%

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

et al. 2018

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“…As common and powerful tools, piezoresponse force microscopy (PFM) and conductive atomic force microscopy (C-AFM) have been extensively adopted for investigating nanoscale ferroelectrics [22,23,24]. Compared with the other classical domain characterization techniques, PFM has distinct advantages with respect to its super-high resolution and local electrical poling ability based on tip-bias, which make it a powerful method for investigating domain structures at the nanoscale.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O3 Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy

Zhao

Zou

et al. 2017

Materials

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In this work, we have studied the microstructures, nanodomains, polarization preservation behaviors, and electrical properties of BiFe0.95Mn0.05O3 (BFMO) multiferroic thin films, which have been epitaxially created on the substrates of SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si at different oxygen pressures via piezoresponse force microscopy and conductive atomic force microscopy. We found that the pure phase state, inhomogeneous piezoresponse force microscopy (PFM) response, low leakage current with unidirectional diode-like properties, and orientation-dependent polarization reversal properties were found in BFMO thin films deposited at low oxygen pressure. Meanwhile, these films under high oxygen pressures resulted in impurities in the secondary phase in BFMO films, which caused a greater leakage that hindered the polarization preservation capability. Thus, this shows the important impact of the oxygen pressure on modulating the physical effects of BFMO films.

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Analogy between growth of crystals and ferroelectric domains. Application of Wulff construction

Есин

Ахматханов

Shur

2019

Journal of Crystal Growth

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Domain wall orientation and domain shape in KTiOPO4 crystals

Cited by 10 publications

References 40 publications

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

Influence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O3 Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy

Analogy between growth of crystals and ferroelectric domains. Application of Wulff construction

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