2017
DOI: 10.1007/s40843-017-9188-3
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Domain-wall nanoelectronics in ferroelectric memory

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“…We propose that the four IP ferroelectric domain and abundant CDWs (as shown in Figure a) are responsible for such bifunctionality, as sketched in Figure d. In BWO thin films, the IP ferroelectric domains lead to both head-to-head (H-H) and tail-to-tail (T-T) domain walls, ,, and such domain wall density can be controlled via the film thickness.…”
mentioning
confidence: 98%
“…We propose that the four IP ferroelectric domain and abundant CDWs (as shown in Figure a) are responsible for such bifunctionality, as sketched in Figure d. In BWO thin films, the IP ferroelectric domains lead to both head-to-head (H-H) and tail-to-tail (T-T) domain walls, ,, and such domain wall density can be controlled via the film thickness.…”
mentioning
confidence: 98%