Domain-wall mobility in orthoferrite crystals grown by float-zone technique

Marsh, A. M.; Fairholme, R. J.; Gill, G. P.

doi:10.1109/tmag.1971.1067177

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1979

2019

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“…Many optical schemes with concentrators for these purposes have been proposed (Figure 1). Crystal growth of refractory oxides by the floating zone technique was introduced by Halden [3], O'Bryan [4], Fairholme [5], Field and Wagner [6], and Medvedev and Balbashov [7]. Employed bi-ellipsoidal and bi-paraboloidal apparatus arrangements used a carbon arc or short arc xenon lamp as radiation sources.…”

Section: Introductionmentioning

confidence: 99%

Contemporary Apparatus for Single Crystals Growth of Oxide Compounds and Metals by Optical Floating Zone (FZ)

Balbashov

2019

Crystals

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A contemporary apparatus with radiation (light) heating for growth of single crystals of refractory oxides and metals is described. To reduce the dissociation or evaporation of the melt or crystal components, the growth process was carried out in oxygen or an alternative gas at pressures up to 100 bar. The annealing system applied directly in the growth process at 1650 °C under O2 pressure and at temperatures up to 2500 °C under protective gas flow, allows the obtaining of large and perfect single crystals. Many single crystals of oxide materials, including incongruently melting substances, such as Y3Fe5O12, Gd3Fe5O12, BaFe12O19, SrFe12O19, BaFe12-x AlxO19, and many others have been grown, and much more could be grown.

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Section: Introductionmentioning

confidence: 99%