Domain wall contributions to the properties of piezoelectric thin films

Bassiri‐Gharb, Nazanin; Fujii, Ichiro; Hong, Eunki; Trolier-McKinstry, Susan; Taylor, D. V.; Damjanović, Dragan

doi:10.1007/s10832-007-9001-1

Cited by 261 publications

(241 citation statements)

References 83 publications

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“…Note that this approach has to be modified for polycrystalline ferroelectrics and especially capacitor based devices, where frequency dispersion can emerge as a result of domain wall dynamics within probing volumes. [337][338][339][340][341][342][343] However, the latter is usually reasonably weak (~<10%/decade).…”

Section: Via Means To Distinguish Piezoelectric From Non-piezoelectmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

264

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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Section: Via Means To Distinguish Piezoelectric From Non-piezoelectmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

264

206

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“…In polycrystalline lead zirconate-titanate (PZT) ceramics, domain wall motion may contribute more than 50% of the dielectric and piezoelectric properties at room temperature [23,28]. However, in thin films these extrinsic contributions to the piezoelectric response can be severely limited by several factors, including substrate clamping [29]. Recent spatially resolved studies of piezoelectric nonlinearities have demonstrated the presence of micron-sized clusters of nonlinear activity, suggesting that surprisingly long-range phenomena are responsible for nonlinear interactions (at a length scale significantly larger than the grain size or domain size).…”

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confidence: 99%

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

et al. 2012

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The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots. Strain in epitaxial oxide films has become a universally recognized method for tuning materials properties [1][2][3], enabling novel couplings between magnetic, lattice, and strain behaviors [4][5][6], stabilizing new phases [7] or domain morphologies [8]. Systematic studies of a material's response to strain enable exploration of the fundamental mechanisms responsible for, e.g., the ferroelectric instability [9][10][11][12].While strain effects on intrinsic properties [9,12] and domain morphologies [13,14] are readily amenable to theoretical and experimental studies, their role on local and emergent properties [15] in disordered materials, including polycrystalline ferroelectric films and relaxors, remains virtually unexplored [16,17], Indeed, many of these materials exhibit unique physical properties including giant electromechanical coupling coefficients, broad dispersions of dielectric permittivity, etc. [18][19][20][21]. These phenomena are often associated with the presence of nanoscale textures of domains or nanoscale phase separation [22][23][24]. In all these materials, the dominant order parameter is either strain (ferroelastics) or is strongly coupled to strain (relaxors, morphotropic systems), suggesting the significant role of frustrated or random strain interactions [25][26][27]. Correspondingly, tuning mechanical boundary conditions can significantly affect emergent behaviors in disordered ferroics and provide insight into corresponding coupling mechanisms.Here, we aim to explore domain wall dynamics as reflected in ferroelectric nonlinearities in model PbZr 0:52 Ti 0:48 O 3 thin films. In polycrystalline lead zirconate-titanate (PZT) ceramics, domain wall motion may contribute more than 50% of the dielectric and piezoelectric properties at room temperature [23,28]. However, in thin films these extrinsic contributions to the piezoelectric response can be severely limited by several factors, including substrate clamping [29]. Recent spatially resolved studies of piezoelectri...

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“…Strong relaxation behavior is then observable for stronger positive and negative biases showing that the more heavily perturbed the domain state is (e.g., by applying higher biases), the easier it is to observe relaxation over the time scale investigated here. 89 To systematically explore the relaxation behavior in the (x,y,V) space, here we utilize the comparison in Eq. (4a) based on the analysis of variances (ANOVA) method.…”

Section: A Relaxation Dynamics Within Hysteresis Loopmentioning

confidence: 99%

Dynamic piezoresponse force microscopy: Spatially resolved probing of polarization dynamics in time and voltage domains

Kumar

Wada

Funakubo

et al. 2012

Journal of Applied Physics

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An approach for probing dynamic phenomena during hysteresis loop measurements in piezoresponse force microscopy (PFM) is developed. Dynamic PFM (D-PFM) necessitates development of 5-dimensional (5D) data acquisition protocols and associated methods for analysis and visualization of multidimensional data. Using a combination of multivariate statistical analysis and phenomenological fitting, we explore dynamic behavior during polarization switching in model ferroelectric films with dense ferroelastic domain structures and in ferroelectric capacitors. In polydomain films, multivariate analysis of the switching data suggests that ferroelectric and ferroelastic components can be decoupled and time dynamics can be explored. In capacitors, a strong correlation between polarization dynamics and microstructure is observed. The future potential of D-PFM for probing time-dependent hysteretic phenomena in ferroelectrics and ionic systems is discussed.

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Domain wall contributions to the properties of piezoelectric thin films

Cited by 261 publications

References 83 publications

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

Dynamic piezoresponse force microscopy: Spatially resolved probing of polarization dynamics in time and voltage domains

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