Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film

Chen, Weigang; Ren, Wei; You, Lü; Yang, Yurong; Chen, Zuhuang; Qi, Yajun; Zou, Xi; Wang, Junling; Sritharan, Thirumany; Yang, Ping; Bellaïche, L.; Chen, Lang

doi:10.1063/1.3664394

Cited by 23 publications

(14 citation statements)

References 18 publications

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“…An intermediate phase may occur in a narrow E -field window (Supplementary Note 1), but is numerically found to have a small impact on energy density and efficiency. Note that intermediate phases have been experimentally reported for Bi 1− x R x FeO 3 solid solutions in the compositional region that bridges the R3c and Pnma states17242526272829.…”

Section: Resultsmentioning

confidence: 74%

Designing lead-free antiferroelectrics for energy storage

2017

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Dielectric capacitors, although presenting faster charging/discharging rates and better stability compared with supercapacitors or batteries, are limited in applications due to their low energy density. Antiferroelectric (AFE) compounds, however, show great promise due to their atypical polarization-versus-electric field curves. Here we report our first-principles-based theoretical predictions that Bi1−xRxFeO3 systems (R being a lanthanide, Nd in this work) can potentially allow high energy densities (100–150 J cm−3) and efficiencies (80–88%) for electric fields that may be within the range of feasibility upon experimental advances (2–3 MV cm−1). In addition, a simple model is derived to describe the energy density and efficiency of a general AFE material, providing a framework to assess the effect on the storage properties of variations in doping, electric field magnitude and direction, epitaxial strain, temperature and so on, which can facilitate future search of AFE materials for energy storage.

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Section: Resultsmentioning

confidence: 74%

Designing lead-free antiferroelectrics for energy storage

2017

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“…15 A similar decreasing tendency by rare-earth doping has been reported in the Sm 10%-doped BFO sample, which exhibited a much smaller anisotropy value of B0.5%. 37 The origin of straight stripe T-R 0 PB is yet to be clearly understood. We encourage more rigorous theoretical and experimental studies on the possibility that the reduced anisotropy of in-plane lattice parameters offers better compatible matching between the T-and R 0 -phase within mixed-phase areas.…”

Section: Resultsmentioning

confidence: 99%

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

et al. 2014

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This study examines the atomic force microscope (AFM) tip-based electrical formation of tens of microns long stripe (and B100 nm wide) inorganic one-dimensional nanostructures based on the morphotropic phase boundary of La-doped BiFeO 3 epitaxial thin films. The substitution of Lanthanum into bismuth ferrite not only produces the formation of straight stripe mixedphase patterns but also improves the spatial continuity drastically by two orders of magnitude. We create, switch and erase stripe nanostructures in a reversible and deterministic way. We demonstrate that electrically formed areas with a nearly single variant alignment can be overwritten with different alignments repeatedly, which reflects the reversible and nonvolatile nature of the switching process. In addition, we explore the functionality of the created nanostructures by clarifying ferroelectric polarizations and observing the improvement of the electronic conduction at the phase boundary. Our findings provide new pathways to one-dimensional rewritable nanostructures and inspire researchers to conceive various multifunctional devices by combining the superb electromechanical property with their unique interfacial electronic conduction properties at nanoscale phase boundaries.

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“…Using piezoelectric force microscopy (PFM), transmission electron microscopy (TEM) and synchrotron X-ray reciprocal space maps (RSM), the strain-driven phase transitions (R → M A → M C → T) have been confirmed and are demonstrated in Figure 2. It is worth noting that there is a M A → M C phase transition for highly strained BFO and Sm-doping BFO ultrathin films when grown on LAO (with misfit strain ε xx ~−4.3%) [27,30,54], rather than a simple iso-symmetric one (M A → M A ) [22,26,41]. For thicker films [51,55], the compressively strained film starts to relax and a mixed T&R phase is formed.…”

Section: Effect Of Misfit Strain On Bfo Ultrathin Filmsmentioning

confidence: 99%

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

Huang

Chen

2014

Materials

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In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

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Domain structure and in-plane switching in a highly strained Bi_0.9Sm_0.1FeO₃ film

Cited by 23 publications

References 18 publications

Designing lead-free antiferroelectrics for energy storage

Designing lead-free antiferroelectrics for energy storage

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

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