“…Magnetoresistance (MR), which presents the change of resistance under external magnetic field, can reflect rich physical origins for spintronic information devices. , In MR devices including nonvolatility memories, sensors for current or angle, filters, etc., the MR ratios relate to the sensitivity, stability, and precision features. , Especially for emerging information technologies such as Internet of Things, flexible sensing, − and artificial intelligence, , high MR ratios can significantly improve the performance of these novel applications, which is the core goal pursued by physicists and materials scientists. To obtain high MR ratios, different types of MR devices including anisotropic MR, giant MR, colossal MR, tunneling MR, and extremely large MR (XMR) have been continuously developed and improved .…”