Doherty Transmitter Based on Monopole Array Antenna Active Load Modulation

Zhao, Yulong; Ghannouchi, Fadhel M.; Helaoui, Mohamed; Li, Xiang; Du, Xuekun; Zhang, Weiwei; Apperley, Thomas

doi:10.1109/lmwc.2018.2863720

Cited by 8 publications

(1 citation statement)

References 9 publications

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“…To obtain decent output power from a power amplifier (PA), several techniques have been studied to improve the efficiency [1]- [8] and bandwidth [9]- [15]. In the past 20 years, doherty PAs (DPAs) have been studied considerably to enhance their bandwidth efficiency [16]- [19]. However, the majority of the published DPAs were designed to cater for single band but not multiband requirements.…”

Section: Introductionmentioning

confidence: 99%

Dual-band doherty power amplifier with improved reactance compensation

Aridas

Latef

2021

IJEECS

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In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43% and 47%, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively.

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Section: Introductionmentioning

confidence: 99%

Dual-band doherty power amplifier with improved reactance compensation

Aridas

Latef

2021

IJEECS

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6–18 GHz GaAs pHEMT Broadband Power Amplifier Based on Dual-Frequency Selective Impedance Matching Technique

Lee

Kim

et al. 2019

IEEE Access

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This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications. For a broadband PA design, lower and upperfrequency corners where serious performance degradation is likely to occur should be carefully considered. Feedback and resistive biasing circuits were adopted for driver and main stages to making their frequency responses as flat as possible. Optimum impedances of not only extended lower and upper-frequency corners but also center frequency, were then extracted. Such dual-frequency selective impedance matching technique was applied for extended lower and upper-frequency corners while checking the mismatch level for the center frequency. The proposed broadband PAIC for frequency band from 6 to 18 GHz was designed using a 0.15 µm GaAs enhanced-mode pHEMT (E-pHEMT) process. The implemented broadband PAIC with a simple two-stage structure had a very small chip size of 1.19×0.82 mm 2 . It exhibited a power gain of more than 16.4 dB and output power of 19.2 dBm. Very flat characteristics in power gain and an output power within ±1.0 dB through the whole band were achieved.INDEX TERMS Broadband power amplifier, power amplifier integrated circuit, GaAs pHEMT, dual-frequency selective impedance matching.

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