DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

doi:10.1016/j.nimb.2006.10.063

Cited by 24 publications

(9 citation statements)

References 29 publications

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“…This paper comprehensively discusses the advantages of SHI radiation hardness testing of SiGe HBTs over 60 Co gamma in the total dose ranging from 1 Mrad to 100 Mrad. In addition, the present work assesses the potential use of SiGe HBTs in front-end electronics for emerging high energy physics experiments, including for possible use in the upgradation of the silicon strip detector and liquid argon calorimeter of the ATLAS detector as part of the LHC, CERN, Geneva, Switzerland [10,11].…”

Section: Introductionmentioning

confidence: 99%

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

Vinayakprasanna¹,

Praveen²,

Pushpa³

et al. 2015

Adv. Mater. Lett.

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The total dose effects of 80 MeV carbon ions and 60 Co gamma radiation in the dose range from 1 Mrad to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The stopping and range of ions in matter (SRIM) simulation study was conducted to understand the energy loss of 80 MeV carbon ions in SiGe HBT structure. Pre-and post-radiation DC figure of merits such as Gummel characteristics, excess base current, ideality factor, DC current gain, damage constant, neutral base recombination, avalanche multiplication of carriers and output characteristics were used to quantify the radiation tolerance of the devices. The excess base current, current gain and damage constant for 80 MeV carbon irradiated SiGe HBTs show more degradation when compared to 60 Co gamma irradiation. The ideality factor for 80 MeV carbon ions irradiated SiGe HBTs is also more when compared to 60 Co gamma irradiated SiGe HBTs. The SiGe HBTs shows minimal degradation in current gain at collector current levels (~ 1 mA) where the circuits are biased even after 100 Mrad of total dose. Therefore SiGe HBTs are became the reliable candidate for deep space exploration programs and high energy physics experiments (HEP) like large hadron colliders (LHCs).

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Section: Introductionmentioning

confidence: 99%

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

Vinayakprasanna¹,

Praveen²,

Pushpa³

et al. 2015

Adv. Mater. Lett.

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“…The energy level E c -0.069 eV is attributed to the Si self-interstitial (24), which acts as a good recombination center. The defect level E c -0.318 eV is found to be an A-center (V-O) (19). The defect labeled E31 with energy E c -0.523 eV is a new type of defect found in n-type devices when irradiated with an ion fluence of 1 × 10 12 ions/cm 2 .…”

Section: Dlts Measurementsmentioning

confidence: 88%

“…The defect energy level E11 with an activation energy of E c -0.235 eV is observed for the device irradiated with lithium ions at a fluence 1 × 10 10 ions/cm 2 . This defect is attributed to a di-vacancy (19)(20)(21)(22) and acts as a good generation-recombination (G-R) center, which can be the source of leakage currents (23). A di-vacancy is the defect formed by two adjacent vacancies.…”

Section: Dlts Measurementsmentioning

confidence: 99%

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li³⁺ion-irradiated Ni/SiO₂/Si MOS capacitors

Shashank

Singh

Gupta

et al. 2011

Radiation Effects and Defects in Solids

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Ni/SiO 2 /Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li 3+ ions with fluences ranging from 1 × 10 10 to 1 × 10 12 ions/cm 2 . High frequency C-V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.

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“…A DLTS study of deep level defects in Li-ion irradiated transistor (chosen from the same batch) is also reported earlier [10].…”

Section: Introductionmentioning

confidence: 90%

Investigation of deep level defects in copper irradiated bipolar junction transistor

Madhu

Kumar

Ravindra

et al. 2008

Solid-State Electronics

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a b s t r a c tCommercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu 11+ -ions with fluence of the order 10 12 ions cm À2 , is studied for radiation induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from E C À 0.164 eV to E C À 0.695 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from E V + 0.203 eV to E V + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350°C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.

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DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

Cited by 24 publications

References 29 publications

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li³⁺ion-irradiated Ni/SiO₂/Si MOS capacitors

Investigation of deep level defects in copper irradiated bipolar junction transistor

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DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

Cited by 24 publications

References 29 publications

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li3+ion-irradiated Ni/SiO2/Si MOS capacitors

Investigation of deep level defects in copper irradiated bipolar junction transistor

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DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li³⁺ion-irradiated Ni/SiO₂/Si MOS capacitors