2013
DOI: 10.1109/tps.2013.2256800
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DLC Coating by HiPIMS: The Influence of Substrate Bias Voltage

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Cited by 44 publications
(15 citation statements)
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“…[21][22][23] Many researchers have reported the preparation of DLC films by HiPIMS. [24][25][26][27][28][29] DeKoven et al 24) reported that the ion-toneutral ratio for carbon in HiPIMS of pure Ar was much lower than those for other materials used for HiPIMS owing to the higher ionization potential of carbon than that of metal. However, Sarakinos et al showed an increase of 40-45% in the amount of sp 3 C bonds in DLC films prepared by HiPIMS of Ar.…”
Section: Introductionmentioning
confidence: 99%
“…[21][22][23] Many researchers have reported the preparation of DLC films by HiPIMS. [24][25][26][27][28][29] DeKoven et al 24) reported that the ion-toneutral ratio for carbon in HiPIMS of pure Ar was much lower than those for other materials used for HiPIMS owing to the higher ionization potential of carbon than that of metal. However, Sarakinos et al showed an increase of 40-45% in the amount of sp 3 C bonds in DLC films prepared by HiPIMS of Ar.…”
Section: Introductionmentioning
confidence: 99%
“…The substrates were biased during the deposition using RF biasing, with a DC self-bias of −100 V during C deposition, and at −50 V for Ti deposition. The biasing voltage at −100 V was chosen based on previous studies that showed an optimum around this values in terms of film density and hardness [9,22,28,31]. All samples were obtained at a total pressure of 2 Pa, maintained by an automatic valve that regulates the pumping section.…”
Section: Methodsmentioning
confidence: 99%
“…Sporadic attempts have also been made to deposit a-C films with HiPIMS. However, in most of the studies so far, the characterization of plasma has been the focus, rather than the properties of resulting films [8][9][10][11][12]. Lattemann etal.…”
Section: Introductionmentioning
confidence: 99%