Untitled

Bogoboyashchii, V. V.; Inzhin, I. I.

doi:10.1023/a:1026630818471

Cited by 38 publications

(22 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 Electrical properties of Hg 1−x Cd x Te layers subjected to IBT The observed relation between h and x is in a good agreement with the diffusion model [3,[10][11][12] of conductivity type conversion in HgCdTe under IBT. This model states that the conversion is due to the diffusion of interstitial mercury atoms Hg I , which are freed at the surface of the crystal sputtered by ion treatment.…”

Section: Resultssupporting

confidence: 71%

See 1 more Smart Citation

Modification of Hg1−Cd Te and related materials by ion-beam treatment

Mynbaev

Ivanov-Omskiĭ

2004

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 71%

“…Also, with increasing x, and therefore, E g , the built-in electric field effect is enhanced. This field appears near the boundary of the converted layer due to a graded density of charged centres and is expected to decrease the efficient C s value [11].…”

Section: Resultsmentioning

confidence: 99%

Modification of Hg1−Cd Te and related materials by ion-beam treatment

Mynbaev

Ivanov-Omskiĭ

2004

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…These settings are mostly expected in theoretical analyses, 15,17,18 and Eq. 6 has been verified experimentally.…”

Section: Saturated Constant Surface Sourcementioning

confidence: 87%

Formation and propagation of p-n junction in p-(HgCd)Te caused by dry etching

Belas

Grill

Franc

et al. 2002

Journal of Elec Materi

View full text Add to dashboard Cite

INTRODUCTIONThe II-VI narrow-gap Hg 1Ϫx Cd x Te single crystals are frequently investigated because of their applicability for the preparation of long-and middle-range infrared detectors. The quality of a final device strongly depends on the quality of each partial technological step. Dry etching (DE) is a widely used technological operation for structuring and removing a material in the semiconductor industry. In the case of p-type (HgCd)Te, Ar ion milling or reactive ion etching in Ar or H 2 /CH 4 plasma result in the formation of the n-type layer under the etched surface over relatively large depths (Ϸ100 m) at room temperature within short times (Ϸ10 min). 1-5 Very good quality p-n junctions were produced by DE, and high-performance IR photovoltaic detectors were fabricated. 6,7 Up to now, however, the determination of optimal etching conditions for formation of shallow p-n junctions with low surface damage, predefined thickness, and minimal lateral extension of the converted layer remains a technological problem.The model mostly used to explain the p-n conversion is based on an assumption that Hg interstitials (Hg I ) are liberated during DE by collisions of etching atoms with the surface, diffusing fast into the sample, 8 and recombining with Hg vacancies (V Hg ) or extrinsic acceptors (As, Au). 9-11 Consequently, residual uncompensated donors prevail and convert the sample into the n-type.The purpose of this paper is to make precise the preceding model in a more detailed form. We analyze the character and the properties of the surface source of Hg I especially and its influence on the broadening of the n-type layer. Coupled one-dimensional and two-dimensional equations describing diffusion of Hg I and their recombination with V Hg are solved to characterize the propagation of the p-n junction in the case of nonshielded and partly shielded surfaces. A seeming discrepancy between various experiments, which produce different time dependencies of the p-n junction depth (from square root to linear), being continuously reported in the literature, 1,3,12,13 is explained by the effect of the formation of the surface source of Hg I at the start of the etching and possibly by the density gradient of the acceptors. The ratio depth/lateral extension of the p-n junction under the shielding mask is calculated and analyzed as well. MODELThe model of the type conversion of p-(HgCd)Te, assuming ultrafast diffusion of Hg I liberated at the etched surface and its recombination with V Hg , was accepted in the past as the most promising model to explain all reported experimental results. It appeared to be fruitful also in the case of extrinsicallyThe extended model describing the formation and propagation of a converted n-type layer in p-(HgCd)Te during dry etching (DE) based on the ultrafast diffusion of Hg interstitials and their recombination with Hg vacancies is presented. A couple of one-and two-dimensional equations are solved numerically to characterize the kinetics of the p-n junction. The time dependence of the p-n ju...

show abstract

“…Ion milling is one of the most promising methods of fabricating p-n junctions for long (LWIR) and midwaveinfrared (MWIR) photodetectors based on p-Hg 1−x Cd x Te (MCT) [1,2]. Processing MCT with low-energy ions causes the formation of a source of mercury interstitials Hg I , which get injected into the bulk of the material due to a very high surface concentration [3,4]. Propagating into the crystal, the interstitials annihilate the mercury vacancies and react with acceptors to form donor centres.…”

Section: Introductionmentioning

confidence: 99%

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Pociask

Іжнін

Izhnin

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Ion milling was used to establish the minimum donor doping level N md required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration N In = 5 × 10 14 -10 17 cm −3 . A study of the electrical properties of the milled films showed that N md comprised ∼2 × 10 15 cm −3 for the LWIR and ∼5 × 10 15 cm −3 for the MWIR films. In the films with N In exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.

show abstract

Untitled

Cited by 38 publications

References 4 publications

Modification of Hg1−Cd Te and related materials by ion-beam treatment

Modification of Hg1−Cd Te and related materials by ion-beam treatment

Formation and propagation of p-n junction in p-(HgCd)Te caused by dry etching

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Contact Info

Product

Resources

About