Diverse interface effects on ferroelectricity and magnetoelectric coupling in asymmetric multiferroic tunnel junctions: the role of the interfacial bonding structure

Liu, X. T.; Chen, W. J.; Jiang, Gelei; Wang, Biao; Zheng, Yue

doi:10.1039/c5cp05207f

Cited by 15 publications

(9 citation statements)

References 46 publications

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“…It is crucial but a challenge to fully understand the physics underlying these phenomena. It is noted that there has been a surge of first‐principles studies on these topics recently . Many of the interface issues involved in the MFTJ can be modeled and studied by first‐principles methods.…”

Section: Beyond Atomic 2d Semiconductorsmentioning

confidence: 99%

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Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

191

135

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Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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Section: Beyond Atomic 2d Semiconductorsmentioning

confidence: 99%

“…It is noted that there has been a surge of firstprinciples studies on these topics recently. 741,755,[757][758][759][760][761][762][763][764][765][766] Many of the interface issues involved in the MFTJ can be modeled and studied by first-principles methods.…”

Section: Magnetic Data Storagementioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

191

135

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“…It has, however, been proposed that a robust polarization in ultrathin films-thinner than 30 unit cells (u.c. )-can be promoted by interface defects (13,14), distortions in the metallic buffer (15,16), or the interfacial chemical bonding (17)(18)(19). Interface effects can also influence the character of the polarization across the whole film in the ultrathin regime.…”

mentioning

confidence: 99%

Interface and surface stabilization of the polarization in ferroelectric thin films

Gattinoni

Strkalj

Härdi

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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Ferroelectric perovskites present a switchable spontaneous polarization and are promising energy-efficient device components for digital information storage. Full control of the ferroelectric polarization in ultrathin films of ferroelectric perovskites needs to be achieved in order to apply this class of materials in modern devices. However, ferroelectricity itself is not well understood in this nanoscale form, where interface and surface effects become particularly relevant and where loss of net polarization is often observed. In this work, we show that the precise control of the structure of the top surface and bottom interface of the thin film is crucial toward this aim. We explore the properties of thin films of the prototypical ferroelectric lead titanate (PbTiO3) on a metallic strontium ruthenate (SrRuO3) buffer using a combination of computational (density functional theory) and experimental (optical second harmonic generation) methods. We find that the polarization direction and strength are influenced by chemical and electronic processes occurring at the epitaxial interface and at the surface. The polarization is particularly sensitive to adsorbates and to surface and interface defects. These results point to the possibility of controlling the polarization direction and magnitude by engineering specific interface and surface chemistries.

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“…charge accumulation in outer electrodes sandwiching the material, or charge accumulated in contaminating layers; 2 (iii) an origin related to surface chemical reconstructions or to other quantum chemical phenomena related to the translational symmetry breaking at surfaces. 4,5 Evidence for this charge accumulation is brought mainly by photoelectron spectroscopy. 6,7 The usual approach was to consider that these charges are accumulated such as to compensate the depolarization field produced by fixed charges, which would elsewhere destroy the single domain state.…”

Section: Introductionmentioning

confidence: 99%