Efficient, broadband, and portable short-wave near-infrared (SW-NIR) light sources are desirable for applications in compact optical systems. Two-dimensional materials, with strong light−matter interactions and high compatibility with various platforms, are promising candidates. Here, we demonstrate a robust and broadband light emission in phosphorene, covering the entire SW-NIR band (750−1100 nm), through oxygen defect engineering. The light emission intensities can be further enhanced utilizing a controlled in situ photoactivated oxidation effect, which are over 25× higher than those in pristine bilayer phosphorene, 3.5× higher than those in monolayer WSe 2 , and only 11.5% lower than those in monolayer WS 2 . Our work demonstrates that phosphorene is a promising platform for investigating SW-NIR light-emitting devices and applications.