1995
DOI: 10.1021/ja00138a006
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Dithiadiazafulvalenes-New Strong Electron Donors. Synthesis, Isolation, Properties, and EPR Studies

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Cited by 55 publications
(25 citation statements)
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“…erials (1)(2)(3)(4). On the one hand, due to their high electron donor properties, DTDAFs reduce almost all the traditional acceptors used in this research area.…”
Section: Introductionmentioning
confidence: 99%
“…erials (1)(2)(3)(4). On the one hand, due to their high electron donor properties, DTDAFs reduce almost all the traditional acceptors used in this research area.…”
Section: Introductionmentioning
confidence: 99%
“…The improved stability of TTF‐1 based device may be attributed to its merits. First, TTF‐1 has a proper HOHO level of −5.0 eV with respect to vacuum level, matching well with the HOHO of MAPbI 3 (−5.44 eV), thereby making sure large drive force for hole transfer from perovskite to counter electrode. Second, the strong S–S interactions generated by neighboring conjugated units and internal π–π stacking contributed to their efficient hole conductivity as well as stable chemical structures, and Miskiewicz also reported the highest hole mobility of 0.1 cm 2 V −1 s −1 for TTF‐1 .…”
Section: Strategies For Enhancing the Stability Of Devicesmentioning
confidence: 79%
“…Small‐molecule HTMs have been used extensively for electron blocking and hole transport due to their defined molecular weights, easy modification, low cost, simple purification, and superior film‐forming capabilities …”
Section: Htmsmentioning
confidence: 99%
“…A solution to this problem was provided by Liu et al., who recommended sulfur‐containing HTMs as a substitute to nitrogen‐containing HTMs due to their long π conjugation. Tetrathiafulvalene (TTF) exhibits a HOMO level at −5.0 eV, which matches that of CH 3 NH 3 PbI 3 (−5.4 eV) . TTF also hasa strong electron‐donating ability and tuning of the energy levels is easy due to facile substitution at the 2‐,3‐,6‐, and 7‐positions.…”
Section: Htmsmentioning
confidence: 99%