Disturbance of the topography of Cu layers deposited by magnetron sputtering as a potential technique for increasing the absorption area of photovoltaic cells
Abstract:This paper addresses the influence of the sputtering time and hence thickness of thin copper (Cu) layers on the grain size, surface morphology and electrical properties. Cu layers 54–853 nm thick were deposited at room temperature from a Cu target with a sputtering power of 2.07 W⋅cm− 2 in an argon atmosphere at a pressure of 8⋅10− 3 mbar. The structural and electrical properties were determined on the basis of four-contact probe measurements, stylus profilometry, atomic force microscopy (AFM), scanning electr… Show more
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