Distribution of components in single crystals grown from completely mixed melts of Hg1−xCdxTe and Pb1−xSnxTe systems

Convection in the bridgman growth of narrow-gap semiconductors

“…In these conditions, criterion (1) is not satisfied and the constitutional supercooling is avoided, p-type samples ((2 x 3 x 9)mm 3, dislocation density ~ 105 cm -2) were obtained from the central part of the single crystals, where the stoichiometric variation, due to the normal segregation, can be neglected [15]. In these conditions, criterion (1) is not satisfied and the constitutional supercooling is avoided, p-type samples ((2 x 3 x 9)mm 3, dislocation density ~ 105 cm -2) were obtained from the central part of the single crystals, where the stoichiometric variation, due to the normal segregation, can be neglected [15].…”