Distributed MEMS Tunable Impedance-Matching Network Based on Suspended Slow-Wave Structure Fabricated in a Standard CMOS Technology

Fouladi, Siamak; Domingue, Frédéric; Zahirovic, Nino; Mansour, Raafat R.

doi:10.1109/tmtt.2010.2042511

Cited by 27 publications

(11 citation statements)

References 34 publications

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“…On top of that, recent works available also not study the impact of non-linear frequency and power dependence of the rectifier impedance. In order to work out this challenge, this research work proposes to utilize a tunable narrow band impedance matching network which is inspired by Fouladi et al (2010). The purpose is to produce maximum energy conversion even in case of a slight change of frequency in the matching circuit.…”

Section: Fig 2 Rf Energy Harvesting Systemmentioning

confidence: 99%

MEMS Based RF Energy Harvester for Battery-Less Remote Control: A Review

Yunus¹,

Sampe²,

Yunas³

et al. 2017

American Journal of Applied Sciences

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The paper deals with the growing interest of energy harvesting systems due to great development in many new emerging technologies in electronics and telecommunication. The research focuses particularly about rectenna element comprises of antenna, impedance matching and rectifier. The rectenna is applied under Micro-Electromechanical-System (MEMS) technology design use in Radio Frequency (RF) energy harvester. MEMS is a technology of miniaturization that has been mostly adopted from integrated circuit industry together on a chip that are made using micro fabrication technique and applied for not only electrical systems. RF ambient source is considered over other ambient sources because RF can be broadcasted by various wireless systems in unlicensed frequency bands. However, the amount of energy captured from the ambient RF is extremely low which need improvements and more Direct Current (DC) voltage generated from RF energy harvester. For this motivation, a dual band MEMS rectenna is proposed for maximizing the efficiency. Power Management Unit (PMU) is interposed between MEMS rectenna and a load. The system is equipped with temporary energy storage and voltage regulator to produce optimum output voltage. The paper proposes a system that is designed and simulated using PSpice software and modeled in Mentor Graphic. The stated result from RF MEMS energy harvester is to provide functional conversion efficiency and reliable energy harvesting system to reach 1.5-3.0 V output voltage for operating frequency at 1.9 and 2.45 GHz from RF input power at -20 dBm with reveal approximately 100% improvement over other existing designs. The conceptual design can be the platform for innovative developments in recent technologies to achieve wireless transmission powered only by RF MEMS energy harvester.

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Section: Fig 2 Rf Energy Harvesting Systemmentioning

confidence: 99%

MEMS Based RF Energy Harvester for Battery-Less Remote Control: A Review

Yunus¹,

Sampe²,

Yunas³

et al. 2017

American Journal of Applied Sciences

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“…The advantage of the maskless post-processing of the standard CMOS chips as reported in [13][14][15][16] lies in accessing consistent and well-established microfabrication processes that are nowadays available from several foundries around the globe. That would ensure uniformity and repeatability of mechanical properties such as residual stress, especially for relatively large RF MEMS devices and circuits as in [17]. Additionally, the CMOS-based phase shifter can be integrated monolithically with antennas resulting in the elimination of wire bonding in between phased array stages, thus allowing for smaller chip size that can host all required components to achieve one chip solution.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of compact digital RF MEMS capacitors and phase shifters in CMOS 0.35 µm technology

Aziz

Bakri-Kassem

Mansour

2020

J. Micromech. Microeng.

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This work reports on the design, fabrication and characterization of compact digital RF MEMS capacitors and phase shifters that are built in the back end of line (BEOL) of CMOS 0.35 µm technology. The devices are micromachined using a maskless post-processing sequence with cryogenic cooling on to control the out-of-plane warping of the metal-oxide structural layers. The implemented vertical electrostatic actuation in the developed post process allows the realization of highly compact designs of both devices, and an operating voltage of the devices is stay below 70 V. The 4-bit capacitors provide a measured tuning ratio close to 10:1 which corresponds to 0.15 pF to 1.2 pF over the frequency range 3–10 GHz. The overall footprint of the digital capacitor is 0.6 mm × 0.9 mm. The measured quality factor after de-embedding the losses due to the RF probing pads is up to 120. The measurement of the 4-bit phase shifters reveals low insertion loss <3 dB at 20 GHz along with low variation of the insertion loss <1 dB up to the same frequency. The measured phase shift is 150 at 20 GHz. The overall footprint of the 4-bit phase shifter is around 1 mm × 1 mm.

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“…Therefore, electronically tunable impedance tuners have recently attracted more attention [11][12][13]. In this regard, varactors and PIN diodes were employed in initial designs, while RF MEMS-based capacitors and switches as well as ferroelectric devices have been considered more recently [14][15][16][17][18][19]. However, one major drawback is that all these investigated tuners cannot exceed power levels on the order of tens of Watts.…”

Section: Introductionmentioning

confidence: 99%

High‐power impedance tuner utilising substrate‐integrated evanescent‐mode cavity technology and external linear actuators

Semnani

Shaffer

Sinanis

et al. 2019

IET microw. antennas propagation

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A 100 W electronically controlled impedance tuner is introduced and experimentally investigated here. The proposed tuner is composed of two individually controlled coupled evanescent‐mode (EVA) cavity resonators implemented on a printed circuit board (PCB) using substrate‐integrated waveguide (SIW) technology. The contactless tuning mechanism relies on two high‐resolution external linear actuators controlling the gap size of each resonator with submicron accuracy. A 3.3 GHz prototype tuner successfully handled up to 100 W of input power with ∼90% Smith chart coverage at the centre frequency and about 52% bandwidth demonstrating at least 50% coverage. Exhibiting low loss of 0.56 dB and very high stability as well, the proposed impedance tuner is a viable solution for high‐power applications where electronic precise tuning is desired.

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Distributed MEMS Tunable Impedance-Matching Network Based on Suspended Slow-Wave Structure Fabricated in a Standard CMOS Technology

Cited by 27 publications

References 34 publications

MEMS Based RF Energy Harvester for Battery-Less Remote Control: A Review

MEMS Based RF Energy Harvester for Battery-Less Remote Control: A Review

Design and characterization of compact digital RF MEMS capacitors and phase shifters in CMOS 0.35 µm technology

High‐power impedance tuner utilising substrate‐integrated evanescent‐mode cavity technology and external linear actuators

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